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A flash memory and its programming method, programming system and memory system

A technology of flash memory and programming method, which is applied in the field of memory, and can solve problems such as the inability to guarantee the accuracy of data stored in memory cells

Active Publication Date: 2021-09-10
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing programming method using multiple programming passes cannot guarantee the data processing capability of the flash memory and the memory system while ensuring the accuracy of the data stored in the storage unit.

Method used

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  • A flash memory and its programming method, programming system and memory system
  • A flash memory and its programming method, programming system and memory system
  • A flash memory and its programming method, programming system and memory system

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Experimental program
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Embodiment Construction

[0047]As mentioned in the background, the existing programming method using multiple programming passes cannot guarantee the data processing capability of the flash memory and the memory system while ensuring the accuracy of the data stored in the storage unit.

[0048] Taking the four-level cell (QLC) flash memory as an example, a storage unit can store 4bit data, that is, each storage unit can have 16 different storage states, represented by E(D0), D1, D2...D15, each A state corresponds to a voltage interval. These 16 voltage intervals are represented by 4-bit binary codes, and each binary bit can be regarded as a page address, then there are 4 page addresses in the QLC flash memory, which can be set as the lower page (LP), the middle page (MP) respectively. ), higher pages (UP) and extra pages (XP), as shown in Table 1 below.

[0049]

[0050]

[0051] After the main controller sends the data of the LP page, the data of the MP page, the data of the UP page and the da...

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Abstract

The present invention provides a flash memory and its programming method, programming system and memory system, including: obtaining the first voltage interval corresponding to the storage unit; raising the voltage of the storage unit to the corresponding first voltage interval; obtaining 2 N‑1 a first voltage interval and its corresponding second programming data; according to the third programming data and the second programming data, the second voltage interval corresponding to the memory cell is obtained, and the second voltage interval group includes 2 N a second voltage range; boost the voltage of the storage unit to the corresponding second voltage range. Since the i-th second voltage interval is the same as the i-th first voltage interval, the threshold difference between the i-th first voltage interval and the (i+1)-th first voltage interval is less than the first preset value, and the i+1-th The difference between the threshold value of the first voltage interval and the (i+2)th first voltage interval is greater than the second preset value. Therefore, the data processing capability of the memory and the system can be guaranteed on the basis of ensuring data accuracy.

Description

technical field [0001] The present invention relates to the technical field of memory, more specifically, to a flash memory and its programming method, programming system and memory system. Background technique [0002] Existing flash memories include multiple storage units, and the state of each storage unit includes a programming state and an erasing state. Wherein, programming the memory cell means programming the memory cell from an erased state to a programmed state. The specific programming method is: applying a programming pulse to inject charges into the gate of the memory cell, so as to apply a voltage within a voltage range corresponding to the data to be stored between the gate and the source of the memory cell. [0003] The storage cells in the flash memory include single-level storage cells (SLC) and multi-level storage cells (MLC). Each single-level storage cell can only store 1 bit of data, while each multi-level storage cell can store Store multiple bits of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/30G11C16/34G06F3/06
CPCG06F3/0644G06F3/0679G11C16/10G11C16/30G11C16/3404
Inventor 盛悦李跃平
Owner YANGTZE MEMORY TECH CO LTD