A three-dimensional memory and its preparation method, a photolithography mask
A photolithographic mask and memory technology, applied in the semiconductor field, can solve problems such as lowering product yield, extrusion of memory cell areas, overlay offset, etc., and achieve the effect of improving product yield and avoiding extrusion
Active Publication Date: 2020-07-14
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0004] However, the current manufacturing process of three-dimensional memory is plagued by local stress, because the memory cell area is surrounded by a filling material layer; and due to process reasons, the filling material layer is easily deformed in the subsequent high-temperature annealing process, thus Squeeze the memory cell area
In addition, since the top pattern of the memory cell area is a large block area (Giant Block, GB), it is often used as an Overlay (OVL) marker in the photolithography process; once the memory cell area boundary is squeezed and deformed, It will directly cause overlay offset and reduce product yield
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[0036] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided for a more thorough understanding of the present invention and to fully convey the scope of the disclosure of the present invention to those skilled in the art.
[0037] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are no...
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The embodiment of the present invention discloses a three-dimensional memory and its preparation method, and a photolithography mask; wherein, the three-dimensional memory includes: a substrate; a stacked structure on the substrate, and the stacked structure includes A plurality of storage unit areas arranged at intervals in the plane direction of the substrate; a filling material layer filled between at least two adjacent storage unit areas; wherein, the stack structure further includes A stress buffer zone, the filling material layer is separated by the stress buffer zone between the at least two adjacent memory cell regions.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a three-dimensional memory, a preparation method thereof, and a photolithography mask. Background technique [0002] Memory is a memory device used to save information in modern information technology. With the increasing demand for integration and data storage density of various electronic devices, it is increasingly difficult for ordinary two-dimensional memory devices to meet the requirements. In this case, three-dimensional (3D) memory emerges as the times require. [0003] In the preparation of three-dimensional memory, the stack structure is mainly formed on the substrate, and the stack structure is divided into several memory cell areas arranged at intervals along the substrate plane direction, thereby forming a memory array; a stepped area is formed around the memory cell area (Stair Steps area, SS area), so that each layer of gate in the memory cell area is condu...
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IPC IPC(8): H01L27/115G03F1/76H10B69/00
CPCG03F1/76H10B69/00
Inventor 朱宏斌高志虎
Owner YANGTZE MEMORY TECH CO LTD