Phase change alloy material, phase change memory and preparation method of phase change alloy material

A phase-change memory and phase-change alloy technology, applied in electrical components and other directions, can solve the problems of the stability and reliability of phase-change memory devices, the inability to fully meet high-temperature use conditions, and the low temperature for ten-year data retention. Good amorphous stability and high thermal stability, reduce phase transition density difference, reduce the effect of working current

Active Publication Date: 2022-03-08
HUAZHONG UNIV OF SCI & TECH
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The crystallization temperature (150°C) and ten-year data retention temperature (85°C) of the current mainstream Ge-Sb-Te phase change materials are relatively low, which cannot fully meet the conditions of high temperature use
Moreover, due to the presence of chalcogenide elements, a large number of voids tend to be produced inside the amorphous phase change material, resulting in a large density difference (above 8%) between the crystalline state and the amorphous state. Such a large density difference is very easy to It leads to failure during the working process of the device, which has a huge impact on the stability and reliability of the phase change memory device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change alloy material, phase change memory and preparation method of phase change alloy material
  • Phase change alloy material, phase change memory and preparation method of phase change alloy material
  • Phase change alloy material, phase change memory and preparation method of phase change alloy material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] In this embodiment, the general chemical formula of the Cu-Sb phase change film material is Cu x Sb 100-x , where x=9.88.

[0046] The Cu—Sb nano film material in this embodiment is preferably prepared by magnetron sputtering. During preparation, high-purity inert gas (gas purity not less than 99.999%) is used as sputtering gas, for example, high-purity argon with gas purity not less than 99.999% is used as sputtering gas in a preferred embodiment, and the sputtering pressure is preferably The Sb target preferably uses a DC power supply with a power of 30W, and several copper sheets are placed on the etching ring of the Sb target for doping emission. Of course, when the Sb target adopts a different power source, such as an AC power source, the power of the power source can be adjusted accordingly, and the sputtering preparation of the Cu-Sb phase-change thin film material can also be completed correspondingly.

[0047] Specifically, Cu 9.88 Sb 90.12 The preparation...

Embodiment 2

[0062] In this embodiment, the preparation method of the Cu-Sb phase-change thin film material is the same as the above steps, the only difference is that the number of copper sheets placed at the etching ring on the surface of the Sb target in step S21 is five pieces of lcm×lcm size . After the above magnetron sputtering process, Cu-Sb phase change thin film materials with different thicknesses can be obtained according to the sputtering time. After quantitative analysis by X-ray photoelectron spectrometer (XPS), it can be known that the chemical composition formula of the film material obtained in the present embodiment is Cu 18.53 Sb 81.47 .

Embodiment 3

[0064] In this embodiment, the preparation method of the Cu-Sb phase-change thin film material is the same as the steps in the first embodiment, the only difference is that the number of copper sheets placed at the etching ring on the surface of the Sb target in step S21 is lcm×lcm The size of eight slices. After the above magnetron sputtering process, Cu-Sb phase change thin film materials with different thicknesses can be obtained according to the sputtering time. After quantitative analysis by X-ray photoelectron spectrometer (XPS), it can be known that the chemical composition formula of the film material obtained in the present embodiment is Cu 28.72 Sb 71.28 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention has disclosed the preparation method of phase -changing alloy materials, phase -changing memory and phase -changing alloy materials. It is the field of phase -changing storage materials. x SB 100‑x The material is obtained by using SB as a matrix material and mixed with CU in the substrate material; where X is an atom percentage, and 0 <x ≤40.The phase -changing alloy material of the present invention has a simple preparation method, and the prepared CU‑SB phase variable alloy material has good high -heat stability and low -phase variable density changes., Ensure the application stability of phase -changing memory and the accuracy of data storage, and make the phase -changing memory have a longer service life, reduce the preparation and application costs of phase -changing memory, have good application prospects and promotion valueEssence

Description

technical field [0001] The invention belongs to the field of phase-change memory materials, and in particular relates to a phase-change alloy material, a preparation method thereof, and a phase-change memory containing the phase-change alloy material. Background technique [0002] In the era of big data, the status of memory is becoming more and more prominent. Both the storage of information data and the transmission of information data pose new challenges to traditional memory. The research and development of new memory has also become an important part of technological innovation. Phase change memory is an excellent non-volatile memory device, which has the characteristics of fast read and write speed, large capacity and low production cost. It is currently one of the most promising next-generation memory devices. Phase change memory mainly uses the resistance difference between the crystalline state and the amorphous state of the phase change material to realize the func...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/881H10N70/026
Inventor 徐明徐萌缪向水
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap