Pattern generation method and preparation method of mask
A graphics generation and graphics technology, which is applied in the photoengraving process of the pattern surface, the original for opto-mechanical processing, optics, etc., and can solve the problems of difficult chip design for foundries.
Pending Publication Date: 2020-01-24
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
However, in the early stage of research and development of a new technology node, it is difficult for the foundry to obtain the design of the actual chip for research and development.
[0003] However, it is necessary to have a mask corresponding to the production technology node, so how to reasonably generate the required graphics, such as detection graphics, etc., is a difficult problem that must be overcome by new technology nodes
Method used
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[0032] The graphic generation method and mask preparation method of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still realize Advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0033] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrati...
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The invention discloses a graph generation method and a preparation method of a mask. The graph generation method comprises the following steps that: a first coordinate system is provided, the first coordinate system is divided into a plurality of areas of which the coordinates are set respectively, wherein the plurality of areas comprise a first target area and at least one first peripheral areaaround the first target area; and a graph in the first peripheral area around the first target area is detected according to the coordinates of the plurality of areas, and a graph in the first targetarea is generated according to the graph in the first peripheral area. Therefore, the graph generated in the target area is limited through the graphs in the peripheral areas, an actual graph generation process is controllable so as to obtain a required graph, and finally, a high-quality mask can be obtained.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a pattern generation method and a mask plate preparation method. Background technique [0002] With the continuous decline of technology nodes, the complex geometric design in the actual chip (Real chip) has brought unprecedented challenges to Optical Proximity Correction (OPC). However, in the early stage of research and development of a new technology node, it is difficult for the foundry to obtain the design of the actual chip for research and development. [0003] However, it is necessary to have a mask corresponding to the production technology node, so how to reasonably generate the required graphics, such as detection graphics, etc., is a difficult problem that must be overcome by new technology nodes. Contents of the invention [0004] The object of the present invention is to provide a graph generating method to generate reasonable graphs. [0005] In order to...
Claims
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Login to View More IPC IPC(8): G03F1/44G03F1/36
CPCG03F1/44G03F1/36
Inventor 陈譞博
Owner SEMICON MFG INT (SHANGHAI) CORP