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Multi-bit Signal Transmission Method for Integrated Circuit Memory

An integrated circuit and signal transmission technology, applied in the direction of digital memory information, static memory, instruments, etc., can solve problems such as abnormal performance of storage units and failure to successfully read stored data, so as to eliminate influence and interference and improve the success rate of reading , the effect of accurate verification and debugging

Active Publication Date: 2021-09-17
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a multi-bit signal transmission method of an integrated circuit memory to solve the problem that a single memory unit in an existing integrated circuit memory cannot successfully read its stored data due to abnormal performance

Method used

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  • Multi-bit Signal Transmission Method for Integrated Circuit Memory
  • Multi-bit Signal Transmission Method for Integrated Circuit Memory
  • Multi-bit Signal Transmission Method for Integrated Circuit Memory

Examples

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Embodiment 1

[0054] In this embodiment, the multi-bit signal transmission method of the integrated circuit memory includes: providing an integrated circuit memory.

[0055] figure 2 It is a schematic structural diagram of the integrated circuit memory in Embodiment 1 of the present invention, such as figure 2 As shown, the integrated circuit memory includes at least one combination memory unit 100, and the combination memory unit 100 includes a plurality of storage subunits, and the plurality of storage subunits are connected to the same bit line. In this embodiment, the combined storage unit 100 includes a first storage subunit 110 and a second storage subunit 120, and the first storage subunit 110 and the second storage subunit 120 share a bit line node NB, And connected to the same bit line BL through the bit line node NB.

[0056] Wherein, the multi-bit signal transmission method of the integrated circuit memory further includes: performing a write operation on the combination memo...

Embodiment 2

[0097] The difference from Embodiment 1 is that in this embodiment, multiple memory sub-units of the composite memory unit are respectively formed in different active regions.

[0098] Figure 5 It is a schematic structural diagram of the integrated circuit memory in Embodiment 2 of the present invention. Such as Figure 5 As shown, the integrated circuit memory includes a plurality of active regions 130 , and the plurality of memory subunits of the combination memory unit 100 are respectively formed on different active regions 130 . In this embodiment, the first storage subunit 110 and the second storage subunit 120 of the combined memory unit 100 are respectively formed in two adjacent active regions 130 . And, both the active region 130 corresponding to the first storage subunit and the active region 130 corresponding to the second storage subunit intersect with the same bit line BL, so that both the first storage subunit 110 and the second storage subunit 120 are connect...

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Abstract

The invention provides a multi-bit signal transmission method of an integrated circuit memory. Since the combined storage unit of the integrated circuit memory has multiple storage subunits (including the first storage subunit and the second storage subunit) that compensate each other, when performing a read operation on the combined storage unit, multiple storage subunits can be utilized. The cells charge the commonly connected bit lines to ensure that the level of the bit lines reaches the required reading level, so that the stored data can be successfully read from the combined memory cells. That is, the combined storage unit of the integrated circuit memory provided by the present invention has a self-compensation function, which can realize multi-bit signal transmission (for example, double-bit signal transmission), which is beneficial to ensure the reading performance of the combined storage unit.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a multi-bit signal transmission method of an integrated circuit memory. Background technique [0002] In a traditional integrated circuit memory, such as a dynamic random access memory (Dynamic Random Access Memory, DRAM), a storage unit usually uses a storage capacitor to store data. Moreover, during the operation of the integrated circuit memory (for example, write operation and read operation), each storage unit independently performs the corresponding operation, for example, during the read process of the memory, each storage unit independently executes the corresponding operation from the corresponding storage The data stored in the capacitor is read out. [0003] However, in the R&D, design and manufacturing process of memory, there are inevitably defective memory cells. Since each memory cell in a traditional memory is independent and performs re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C7/10G11C7/12G11C8/08
CPCG11C7/1063G11C7/12G11C8/08
Inventor 不公告发明人
Owner CHANGXIN MEMORY TECH INC
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