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Method for measuring threshold voltage of MOSFET

A technology of threshold voltage and measurement method, which is applied in the field of threshold voltage measurement and can solve the problem of time-consuming measurement

Active Publication Date: 2020-02-07
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing method is to use the Vtgm measurement method for measurement, because it is necessary to find a maximum transconductance value, so the measurement is relatively time-consuming

Method used

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  • Method for measuring threshold voltage of MOSFET
  • Method for measuring threshold voltage of MOSFET
  • Method for measuring threshold voltage of MOSFET

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Embodiment Construction

[0037] like figure 2 Shown is the flow chart of the method for measuring the threshold voltage of the MOSFET in the embodiment of the present invention; the method for measuring the threshold voltage of the MOSFET in the embodiment of the present invention includes steps:

[0038] Step 1: Short-circuit the gate and drain of the MOSFET, inject a drain current into the drain, and measure the source-drain voltage; the measured source-drain voltage is used as the initial threshold voltage.

[0039] like image 3 Shown is the MOSFET connection diagram in Step 1 of the embodiment of the present invention, image 3 Among them, M1 represents the MOSFET, the gate is represented by G, the drain is represented by D, the source is represented by S, and the injected drain current is represented by Id.

[0040] The drain current injected in the first step is several E-6A, for example, 1E-6A.

[0041] Step 2: Set the gate voltage measurement range according to the initial threshold volta...

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Abstract

The invention discloses a method for measuring threshold voltage of an MOSFET. The method comprises the following steps: step 1, short-circuiting a gate and a drain of the MOSFET, injecting drain current into the drain, and measuring source and drain voltage as initial threshold voltage; step 2, setting a gate voltage measurement range according to the initial threshold voltage; step 3, measuringa static transfer characteristic curve of a linear working region of the MOSFET within the gate voltage measurement range; and step 4, obtaining a maximum transconductance value from the static transfer characteristic curve and linearly extrapolating to form final threshold voltage. By adoption of the method disclosed by the invention, the measurement rate can be improved without affecting or improving the measurement accuracy, and fast and accurate measurement can be achieved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for measuring the threshold voltage of a MOSFET. Background technique [0002] With the development of semiconductor manufacturing technology, the requirements for the accuracy of the threshold voltage value of MOS transistors, namely MOSFETs, are getting higher and higher. At present, more and more measurement items are required to make models, which puts forward higher requirements for fast and accurate measurement. The existing method is to use the Vtgm measurement method for measurement, because it is necessary to find a maximum transconductance value, so the measurement is relatively time-consuming. [0003] The measuring method of the threshold voltage of existing MOSFET comprises the following steps: [0004] Connect the drain of the MOSFET to a small voltage such as 0.1V, so that the MOSFET works in the linear working area; [00...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2603
Inventor 张瑜商干兵
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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