A semiconductor detector with a three-dimensional electrostrictive collection electrode and its preparation method

Abstract

The present invention claims a semiconductor detector for a three-dimensional electrostrictive collecting electrode and its preparation method, which includes: a semiconductor crystal, a cathode and an anode; the semiconductor crystal includes a first surface and a second surface oppositely arranged on both sides of the semiconductor crystal Two sides; the cathode is arranged on the first surface of the semiconductor crystal; the anode is arranged on the second surface of the semiconductor crystal, and the anode includes: a collecting electrode, an electrostrictive electrode and a conductive layer, the electric The electrostrictive electrodes are arranged around the collecting electrodes. The electrostrictive electrodes are electrodes made of electrostrictive electrode materials. Several electrostrictive electrodes are electrically connected to each other through conductive layers. The electrostrictive electrode applies an external control voltage to the electrostrictive electrode, and the electrostrictive electrode extends along the electrode groove, forming an internal electric field deep inside the semiconductor crystal, accelerating the migration and recombination of accumulated carriers deep in the semiconductor crystal, and promoting the signal carrier. Efficient absorption.

Description

technical field [0001] The invention belongs to the technical field of detectors, in particular to a semiconductor detector with a three-dimensional electrostrictive collecting electrode and a preparation method thereof. Background technique [0002] At present, most semiconductor radiation detectors adopt a more efficient detector structure with unipolar carrier collection characteristics, that is, the detector response signal is mainly the induction signal caused by the migration of electron carriers, which can be well improved Problems such as low energy resolution caused by low hole mobility of semiconductor crystal materials. At present, the anode is the electrode of the pixel array, and the cathode is the monopolar detector structure of the overall planar electrode, which has always been one of the main structural forms of semiconductor imaging and energy spectrum detectors ( figure 1 ). [0003] The pixel array semiconductor radiation detector has position sensitivi...

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Problems solved by technology

[0004] The design of the pixel array unit electrodes of traditional semiconductor radiation detectors is very simple, limited to the preparation of pixel unit electrodes with different shapes and planar structures on the surface of the anode. This design makes the electric field distribution inside the detector not easy to be affected and controlled, and various special Shaped planar pixel array electrodes will only cause changes in the electric field in the crystal in the crystal surface area close to the pixel array electrodes, which has a very limited impact on the electric field distribution in the detector, thus affecting the carrier collection ability of the detector

[0005] On the other hand, due to the process of electron carriers migrating inside the crystal and generating induced charges on the pixel electrodes, the smaller planar pixel electrodes are prone to produce crosstalk effects between pixel electrodes when the carriers induce charge collection, This is an inherent defect of the planar pixel array electrode structure

[0006] ·In addition, when the incident X-ray photon flux reaches a certain level, the incident X-ray photons will generate a large number of hole-electron pairs inside the crystal. Due to the material defects in the detector semiconductor material itself, minority carriers exist during the migration process Severe carrier trapping, so under high-flux radiation conditions, there are often accumulated carriers inside the crystal, causing distortion of the internal electric field and affecting the migration signal of the collected carriers

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