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Gamma-ray detection structure based on perovskite p-i-n junction and correction method

A technology of p-i-n and correction method, which is applied in the field of gamma-ray detection structure and correction based on perovskite p-i-n junction, can solve problems such as additional noise, lower detection energy resolution, functional layer performance aging, etc., and achieve small defect density and high Absorption Efficiency, Effect of Suppression Detection Dark Current and Noise

Pending Publication Date: 2022-02-18
SUZHOU YIXIAN ELECTRONIC TECH CO LTD
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Problems solved by technology

[0006] The Northwestern University research group reported a high-resolution gamma-ray energy spectrometer based on perovskite crystals, the structure of which is as follows: figure 2 As shown, in this detection structure, in order to increase the transport performance of photogenerated carriers, it adopts PTAA and C 60 As the hole transport layer (10) and the electron transport layer (8), while the perovskite crystal acts as the absorption and conversion layer of gamma photons, and figure 1 The structure is similar to that of 662keV gamma rays, and the detection structure also adopts a coplanar cathode (7) and a pixelated anode (11). According to reports, a detector pair with a volume of 6.65mm3 has obtained an energy resolution of 1.4% for 662keV gamma rays, but Because it uses organic materials as the electron transport layer and hole transport layer, these functional layers will age quickly under high-energy γ-ray irradiation, resulting in additional noise. In addition, the heterostructure composed of these organic functional layers and perovskite crystals There are many defects in the interface, which will also generate additional noise, thereby reducing the detection energy resolution

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  • Gamma-ray detection structure based on perovskite p-i-n junction and correction method
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Embodiment 1

[0051] Such as Figure 7 As shown, the intrinsic perovskite crystals with a thickness of more than 1 cm were first grown by the temperature inversion method33, such as MAPbBr 2.5 Cl 0.5 Wait. This intrinsic perovskite layer is used as a γ-ray photon absorbing layer. The p-type perovskite epitaxial layer 32 is prepared on the upper end face of the intrinsic perovskite crystal 33 by solution epitaxial doping, such as Ag + Doped MAPbBr 3 . The n-type perovskite epitaxial layer 34 is prepared by solution epitaxial doping on the lower end face of the intrinsic perovskite crystal 33, such as Bi 3+ Doped MAPbBr 3 . An anode electrode 31, such as an Au electrode, is vacuum-evaporated on the upper end of the p-type perovskite epitaxial layer 32 . On the lower end of the n-type perovskite epitaxial layer 34, a cathode electrode 35, such as an Au electrode, is vacuum-evaporated. A negative voltage is applied to the anode 31, and a grounding treatment is performed on the cathode ...

Embodiment 2

[0054] Such as Figure 8 As shown, the gamma-ray detection structure and correction method based on the perovskite p-i-n junction proposed by the present invention, its depth position correction method first adopts the conventional photon counting method to obtain the anode end count value Count_a(i) and The cathode terminal count value Count_c(i), where i is the number of energy channels, and then calculate the depth position information (L e / L h )=Count_a(i) / Count_c(i), the depth position is divided into m levels, further, according to the depth position information (L e / L h ) Calculate the anode end count sequence Count_a(i)j and the anode end count sequence Count_c(i)j of each depth position according to the similar principle, wherein i=1,...,n; j=1,...,m, further, use The characteristic spectral lines calibrate the anode terminal current Ia, the cathode terminal current Ic and the gamma photon energy spectral lines, and finally form the final detection spectral line ...

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Abstract

The invention provides a gamma-ray detection structure based on perovskite p-i-n junction and a correction method, a super-thick intrinsic perovskite crystal is grown by using a temperature inversion solution crystallization method to serve as a gamma-ray photon absorber, a p-type perovskite epitaxial layer is grown on one side of the intrinsic perovskite crystal by using an epitaxial doping growth method, and an n-type perovskite epitaxial layer is grown on the other side of the intrinsic perovskite crystal. A perovskite p-i-n junction is used for inhibiting dark-state current and noise, meanwhile, a large-size perovskite crystal is used for absorbing and converting more gamma photons, and in order to solve the problem that the resolution ratio of detection energy is reduced due to different incidence depths of the gamma photons, detection signals of the cathode end and the anode end are measured at the same time. The longitudinal interaction depth of gamma photons is calibrated according to the ratio of the two signals, then detection events under the same depth are classified and counted respectively, correction parameters are determined by using known characteristic peaks, and finally a gamma ray detection energy spectrum with high detection efficiency and high energy resolution is obtained through a depth position correction algorithm.

Description

technical field [0001] The invention relates to the field of gamma ray detection, in particular to a gamma ray detection structure and correction method based on perovskite p-i-n junction. Background technique [0002] High-sensitivity, high-energy-resolution gamma-ray detection has important applications in homeland security, industrial inspection, and medical imaging. Since 1950, commercial gamma-ray detection materials are usually high-purity Ge (HPGe) and CdTe and other semiconductor materials. , HPGe detectors can obtain high energy resolution, so it is considered as the gold standard for radiation detection, but due to the narrow band gap of HPGe, it needs to work in a liquid nitrogen environment, which limits its application, people It has been exploring semiconductor detection materials that can work at room temperature and achieve similar performance to HPGe, but the progress is still limited. Only Cd1-xZnxTe (x≈0.1, CdZnTe or CZT) has been commercialized, but its p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/36H01L51/42
CPCG01T1/36H10K30/40Y02E10/549G01T7/005G01T1/24H01L31/02019H01L31/032H01L31/115
Inventor 雷威周建明朱莹
Owner SUZHOU YIXIAN ELECTRONIC TECH CO LTD