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Quasi-pt symmetric double ridge semiconductor laser and its application

A semiconductor and laser technology, applied in the field of double ridge semiconductor lasers

Active Publication Date: 2020-10-23
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no one has studied the use of PT symmetry to achieve single-sided mode lasing of stripe semiconductor lasers under electrical injection.

Method used

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  • Quasi-pt symmetric double ridge semiconductor laser and its application
  • Quasi-pt symmetric double ridge semiconductor laser and its application
  • Quasi-pt symmetric double ridge semiconductor laser and its application

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] The quasi-PT symmetric double ridge semiconductor laser of the present invention has a gain waveguide with an electrical injection region and a loss waveguide without an electrical injection region; wherein the gain waveguide provides gain for the entire double ridge semiconductor laser without an electrical injection region The lossy waveguide has a fixed loss, so that in the lateral direction of the double-ridge semiconductor laser ( figure 1 The y-direction in ) forms a quasi-PT symmetric complex refractive index distribution. As the current of the gain waveguide increases, the gain increases. Since the coupling coefficient of the fundamental-order side mode is smaller than that of the higher-order side mode, th...

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Abstract

A quasi-PT symmetrical double-ridged semiconductor laser and application thereof are disclosed. The double-ridged semiconductor laser includes: a gain waveguide having current injection thereon to provide a gain for the laser; and a loss waveguide having no current injection. The gain waveguide and the loss waveguide act together to form a quasi-PT symmetrical complex refractive index imaginary part in the lateral direction of the laser and realize single-sided mode lasing. The quasi-PT symmetrical double-ridged semiconductor laser provided by the present invention changes a coupling coefficient between the two waveguides by designing the width and etching depth of a gain waveguide ridge region and a loss waveguide ridge region, and the distance between the two ridge regions, so as to change the current injection level of the double-ridged semiconductor laser for generating quasi-PT symmetrical spontaneous breaking.

Description

technical field [0001] The invention relates to micro-nano structure research and the field of semiconductor lasers, in particular to a quasi-PT symmetrical double-ridge semiconductor laser and its application. Background technique [0002] For strip semiconductor lasers, the prerequisite for realizing a single-mode laser is to first realize a single transverse mode and a single side mode, respectively corresponding to figure 1 the x-direction and y-direction. Since the lateral direction of the bar-shaped semiconductor laser corresponds to the direction of its material growth, the size of its active region can be maintained on the order of a few nanometers to tens of nanometers, so a single transverse mode can be easily realized; but in the lateral direction of the laser bar Larger width, often multi-side mold. Introducing a PT (Parity-Time, parity-time) symmetric structure into the laser can realize single-side mode output in the bar-shaped semiconductor laser that itself...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/042H01S5/223
CPCH01S5/042H01S5/2231H01S5/2238
Inventor 郑婉华傅廷王宇飞王学友
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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