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Stray capacitance acquisition method of IGBT dynamic parameter test platform

A stray capacitance and test platform technology, which is applied in the measurement of electricity, measurement of electrical variables, bipolar transistor testing, etc., can solve the problems that affect the test results of device parameters and cannot obtain the stray capacitance of the IGBT dynamic parameter test platform.

Active Publication Date: 2020-02-21
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] Therefore, the present invention provides a stray capacitance acquisition method for the IGBT dynamic parameter test platform, which solves the problem that the stray capacitance in the IGBT dynamic parameter test platform cannot be obtained in the prior art, thereby affecting the test results of the device parameters

Method used

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  • Stray capacitance acquisition method of IGBT dynamic parameter test platform
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  • Stray capacitance acquisition method of IGBT dynamic parameter test platform

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Embodiment

[0031] Embodiments of the present invention provide a stray capacitance acquisition method of an IGBT dynamic parameter test platform, such as figure 1 shown, including the following steps:

[0032] Step S1: Analyze and extract the stray capacitance involved in the IGBT dynamic parameter test platform.

[0033] The embodiment of the present invention is based on the double-pulse test method to build an IGBT dynamic parameter test platform, and the test circuit schematic diagram is as follows figure 2 as shown, figure 2 DUT in is the device under test (Device Under Test—DUT), Diode is the freewheeling diode, Lload is the value of the load inductance, ic is the current of the IGBT, iload is the load current, u dc is the DC bus voltage, u ge is the voltage between the gate and emitter of the IGBT. based on figure 2 According to the analysis of the schematic diagram of the test circuit shown, the stray capacitances that exist include: the parasitic capacitance between the ...

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Abstract

The invention discloses a stray capacitance acquisition method of an IGBT dynamic parameter test platform. The stray capacitance related to the IGBT dynamic parameter test platform is analyzed and extracted; the current component of the stray capacitance in the turn-off process of the IGBT is calculated according to an equivalent circuit diagram containing the stray capacitance test circuit; according to the current component, a difference between an actually measured current and an ideal current in the IGBT turn-off transient process is obtained; an IGBT turn-off transient process is used toobtain an incidence relations between the difference, between the actually measured current and the ideal current and the stray capacitance as well as between the difference and the voltage change rate of the collector electrode of the IGBT; and thus, the stray capacitance of the IGBT dynamic parameter test platform is calculated according to the incidence relations. On the basis of the turn-off instant waveform of the IGBT, the transient voltage change rate and current change amount are used, the stray capacitance of the dynamical test platform is calculated by an actual measurement method, and bases are provided for accurately evaluating the dynamic performance of a device and providing reliable dynamic data.

Description

technical field [0001] The invention relates to the technical field of device testing, in particular to a stray capacitance acquisition method of an IGBT dynamic parameter testing platform. Background technique [0002] IGBT combines the advantages of MOS devices and bipolar transistor devices. After years of development, it has become a mainstream device in the field of power electronics and is widely used in communications, transportation, industry, and power transmission. The test of IGBT dynamic parameters is the basic test item of IGBT performance, and its dynamic parameters are the basis of device application design. In order to measure the dynamic parameters of IGBT devices, it is necessary to build a corresponding dynamic performance test platform. However, due to the existence of stray capacitance in the test circuit, during the turn-off transient process, the rapid change of voltage will cause current distortion and affect device parameters. test results. Therefo...

Claims

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2608G01R31/2617
Inventor 唐新灵张喆林仲康王亮李现兵张朋韩荣刚石浩
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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