The invention relates to the technical field of
semiconductor device measurement, and provides a
semiconductor nonlinear output junction
capacitance measurement method based on fitting iteration, and the method comprises the steps: firstly building a junction
capacitance extraction circuit, collecting the turn-off transient waveform of a to-be-measured device through a
test platform, extracting the oscillation frequency fexp through
fast Fourier transform, and carrying out the measurement of the to-be-measured device; based on the relation between the oscillation frequency and the junction
capacitance and parasitic parameters, the initial junction capacitance Coss is reversely deduced; then, fitting is carried out by adopting a
hyperbolic tangent function, fitting parameters are optimized through a least square method, a preliminary junction capacitance Coss-test
voltage udc relation curve under different
voltage grades is obtained, an oscillation frequency
simulation circuit is further built,
simulation frequency fm is obtained, fm is compared with fexp, if deviation exists, the fitting curve is adjusted and iterative optimization is carried out, and the test
voltage udc relation curve of the junction capacitance under different voltage grades is obtained. And ending until the error of two adjacent rounds of fitting results is lower than a set error threshold value, thereby obtaining a final accurate junction capacitance Coss-test voltage udc relation curve.