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Implementation method for residual life prediction and state evaluation of IGBT

A state evaluation and implementation method technology, applied in the semiconductor field, can solve problems such as difficult to obtain good results, increase in resistance, increase in Vce, etc., and achieve the effect of remaining life prediction and state evaluation

Active Publication Date: 2021-12-07
SHANGHAI JIAO TONG UNIV
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AI Technical Summary

Problems solved by technology

When the bonding wire falls off or the solder layer is fatigued, the internal resistance of the IGBT increases, resulting in an increase in Vce
However, Vce is also affected by internal temperature and conduction current, and the current usually changes under actual complex working conditions
It is feasible to use Vce as the aging parameter under the premise of constant current in the laboratory, but it may be difficult to obtain good results in actual working conditions

Method used

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  • Implementation method for residual life prediction and state evaluation of IGBT
  • Implementation method for residual life prediction and state evaluation of IGBT
  • Implementation method for residual life prediction and state evaluation of IGBT

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Experimental program
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Embodiment Construction

[0014] Such as figure 1 As shown, this embodiment relates to a method for implementing IGBT remaining life prediction and state assessment, including the following steps:

[0015] Step 1. Obtain the turn-off transient curves of the collector-emitter voltage Vce of the IGBT module under different aging degrees through the IGBT aging test platform, that is, the IGBT sample starts working from new to aging failure.

[0016] Such as image 3 As shown, the described IGBT aging test platform uses a high-speed signal acquisition system to collect the voltage and current signals of the entire aging process, including: an inductance L, a resistance R, and a DC voltage source sequentially arranged between the collector and the emitter of the IGBT4 to be tested 5 and constitute a test circuit, a drive circuit 3 arranged between the base and the emitter of the IGBT4 to be tested, wherein: the function generator 2 is connected to the drive circuit 3, and the IGBT4 to be tested is further ...

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Abstract

An IGBT residual life prediction and state evaluation realization method comprises the following steps: collecting a turn-off transient curve of collector-emitter voltage Vce of an IGBT module through an aging test platform, extracting features from the turn-off transient curve, filtering the features, carrying out curve trend prediction through a deep auto-regressive recurrent neural network, determining that an IGBT fails when the predicted curve exceeds a threshold value, and obtaining the aging degree and the health state of the IGBT module correspondingly. According to the method, the transient waveform characteristics of the IGBT at the switching moment are used as the IGBT aging index.

Description

technical field [0001] The invention relates to a technology in the field of semiconductors, in particular to a method for implementing IGBT remaining life prediction and state evaluation. Background technique [0002] Because the IGBT (Insulated Gate Bipolar Transistor) not only has the advantages of high MOSFET input impedance, low control power, simple drive circuit, high switching speed, and low switching loss, but also has the advantages of high current density, low saturation voltage, and current handling of bipolar power transistors. The advantage of strong ability, but IGBT is prone to overheating and overvoltage during high-load operation, and its anti-interference and impact resistance are poor. Therefore, using intelligent diagnostic technology to predict the life of IGBT and evaluate the health status of IGBT has become a research hotspot. [0003] The existing IGBT aging research methods include: methods based on finite element simulation, statistical methods ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G06N3/04G06N3/08
CPCG01R31/2601G01R31/2642G06N3/08G06N3/045
Inventor 黄亦翔葛建文
Owner SHANGHAI JIAO TONG UNIV
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