IGBT module life monitoring method
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- LEADRIVE TECH (SHANGHAI) CO LTD
- Publication Date
- 2020-01-24
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Abstract
Description
technical field
[0001] The invention relates to the field of IGBT modules, in particular to a method for monitoring the life of an IGBT module. Background technique
[0002] At present, in the actual application of the IGBT module, there are frequent power cycles due to the influence of various working conditions. During the working process, the chip is continuously heated and cooled, resulting in changes in the metal coating structure on the chip surface. Repeated micro-changes gradually accumulate, resulting in breakage, displacement or shedding of the bonding wires connected to the chip. Finally, the IGBT module Failure due to end-of-life, resulting in unexpected equipment downtime or greater accidents. Therefore, it is very important to monitor the aging condition of the IGBT module and issue a warning before the end of its life, and it is also a technical problem in this field.
[0003] In the prior art, a method for detecting the life of an IGBT is implemented throug...