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A stray capacitance acquisition method for igbt dynamic parameter test platform

A stray capacitance and test platform technology, which is applied in the measurement of electricity, measurement of electrical variables, bipolar transistor testing, etc., can solve the problems that affect the test results of device parameters and cannot obtain the stray capacitance of the IGBT dynamic parameter test platform.

Active Publication Date: 2022-04-05
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Therefore, the present invention provides a stray capacitance acquisition method for the IGBT dynamic parameter test platform, which solves the problem that the stray capacitance in the IGBT dynamic parameter test platform cannot be obtained in the prior art, thereby affecting the test results of the device parameters

Method used

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  • A stray capacitance acquisition method for igbt dynamic parameter test platform
  • A stray capacitance acquisition method for igbt dynamic parameter test platform
  • A stray capacitance acquisition method for igbt dynamic parameter test platform

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Embodiment

[0031] Embodiments of the present invention provide a stray capacitance acquisition method of an IGBT dynamic parameter test platform, such as figure 1 shown, including the following steps:

[0032] Step S1: Analyze and extract the stray capacitance involved in the IGBT dynamic parameter test platform.

[0033] The embodiment of the present invention is based on the double-pulse test method to build an IGBT dynamic parameter test platform, and the test circuit schematic diagram is as follows figure 2 as shown, figure 2 DUT in is the device under test (Device Under Test—DUT), Diode is the freewheeling diode, Lload is the value of the load inductance, ic is the current of the IGBT, iload is the load current, u dc is the DC bus voltage, u ge is the voltage between the gate and emitter of the IGBT. based on figure 2 According to the analysis of the schematic diagram of the test circuit shown, the stray capacitances that exist include: the parasitic capacitance between the ...

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Abstract

The invention discloses a stray capacitance acquisition method of an IGBT dynamic parameter test platform, which analyzes and extracts the stray capacitance involved in the IGBT dynamic parameter test platform; The current component of the stray capacitance during the turn-off process; obtain the difference between the measured current and the ideal current during the IGBT turn-off transient process according to the current component; use the IGBT turn-off transient process to obtain the difference and stray current between the measured current and the ideal current The relationship between capacitance and IGBT collector-emitter voltage change rate; calculate the stray capacitance value of the IGBT dynamic parameter test platform according to the relationship. The present invention is based on the turn-off transient waveform of the IGBT device, uses the transient voltage change rate and the current change amount, and calculates the stray capacitance of the dynamic test platform through the method of actual measurement, so as to accurately evaluate the dynamic performance of the device and provide reliable dynamic data. Base.

Description

technical field [0001] The invention relates to the technical field of device testing, in particular to a stray capacitance acquisition method of an IGBT dynamic parameter testing platform. Background technique [0002] IGBT combines the advantages of MOS devices and bipolar transistor devices. After years of development, it has become a mainstream device in the field of power electronics and is widely used in communications, transportation, industry, and power transmission. The test of IGBT dynamic parameters is the basic test item of IGBT performance, and its dynamic parameters are the basis of device application design. In order to measure the dynamic parameters of IGBT devices, it is necessary to build a corresponding dynamic performance test platform. However, due to the existence of stray capacitance in the test circuit, during the turn-off transient process, the rapid change of voltage will cause current distortion and affect device parameters. test results. Therefo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2608G01R31/2617
Inventor 唐新灵张喆林仲康王亮李现兵张朋韩荣刚石浩
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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