RF MEMS digital variable capacitance unit

Abstract

The invention relates to an RF MEMS digital variable capacitance unit. The unit comprises a substrate. An RF electrode, a ground structure and driving electrodes are distributed on the substrate, theground structure and the driving electrodes are distributed on the two sides of the RF electrode, the ground structure is connected with a warped plate type upper polar plate, the warped plate type upper polar plate is connected with a torsion beam, and the driving electrodes are distributed on the two sides of the torsion beam. A dielectric layer for isolating the warped plate type upper polar plate from the RF electrode is attached to the RF electrode. In a driving process, a first distance, a second distance and a third distance can be formed between the warped plate type upper polar plateand the RF electrode. Therefore, a warped plate type structure is adopted so that controllability of a capacitance value is high. A large distance change between the warped plate type upper polar plate and the RF electrode can be achieved, and a large variable capacitance ratio can be obtained. And if a state is switched between a first distance capacitance state and a third distance capacitance state, a response speed is higher due to dual effects of a driving force and a restoring force of a cantilever beam. And the torsion beams at two ends and a fulcrum of the warped plate type upper polarplate are fixed on the ground structure.

Description

technical field [0001] The invention relates to a capacitance unit, in particular to an RF MEMS digital variable capacitance unit. Background technique [0002] The biggest feature of the evolution from 1G to 5G is that the frequency is getting higher and higher, and the frequency band is getting wider and wider. Today, in the pursuit of miniaturization of equipment, traditional RF front-end devices are becoming more and more difficult to meet the needs of broadband. Therefore, the demand for frequency-tunable devices in RF front-ends is becoming stronger and stronger. Variable capacitance is the "regulator" of frequency-tunable devices. has a pivotal role. However, RF MEMS variable capacitors have attracted more and more attention due to their high Q value, high variable capacitance ratio, high linearity, high power capacity, low power consumption, and low temperature sensitivity. However, the RF MEMS variable capacitors currently researched in the industry are difficult ...

AI Technical Summary

Problems solved by technology

However, the RF MEMS variable capacitors currently researched in the industry are difficult to achieve major breakthroughs in terms of controllability and reliability.

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