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Magnetic memory device

A magnetic storage and magnetic layer technology, applied in the field of magnetic field controlled resistors, material selection, semiconductor devices, etc.

Pending Publication Date: 2020-03-17
KIOXIA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, so far, it cannot necessarily be said that a magnetic storage device with reduced variation in writing characteristics has been obtained.

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0014] Embodiments will be described below with reference to the drawings.

[0015] figure 1 It is a cross-sectional view schematically showing a basic structure of a magnetoresistance effect element in the magnetic memory device according to the embodiment. It should be noted that the magnetoresistance effect element is also called an MTJ (magnetic tunnel junction, magnetic tunnel junction) element.

[0016] figure 1 The magnetoresistance effect element shown is an STT (spin transfer torque, spin transfer torque) type magnetoresistance effect element having a vertical magnetization (perpendicular magnetization), and includes: a first magnetic layer 10, a second magnetic layer 20, sandwiched between A nonmagnetic layer (nonmagnetic layer) 30 between the first magnetic layer 10 and the second magnetic layer 20 , a third magnetic layer 40 , an underlayer (under layer) 50 , and a cap layer (cap layer) 60 .

[0017] figure 1 In the shown magnetoresistance effect element, a fir...

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PUM

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Abstract

The disclosure mainly relates to a magnetic memory device. According to one embodiment, the magnetic memory device includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the first magnetic layer includes a firstsub-magnetic layer in a polycrystalline state and a second sub-magnetic layer in an amorphous state.

Description

[0001] This application claims the priority of the earlier application with Japanese Patent Application No. 2018-168867 (filing date: September 10, 2018). This application incorporates the entire content of the earlier application by referring to this earlier application. technical field [0002] Embodiments generally relate to magnetic storage devices. Background technique [0003] A magnetic memory device (semiconductor integrated circuit device) in which a magnetoresistive element and a transistor are integrated on a semiconductor substrate has been proposed. [0004] In magnetic storage devices, it is important to reduce the write error rate (WER). For this reason, it is necessary to reduce variation in characteristics such as variation in write current. [0005] However, it cannot necessarily be said that a magnetic storage device with reduced variation in writing characteristics has been obtained so far. Contents of the invention [0006] Embodiments provide a mag...

Claims

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Application Information

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IPC IPC(8): H01L27/22H01L43/08
CPCH10B61/00H10N50/10H10B61/20H10N50/85H10B61/22
Inventor 吉川将寿
Owner KIOXIA CORP