A high-insulation inorganic high-resistance glaze for resistor sheets and its preparation method
A high-insulation and high-resistance glaze technology is applied in the field of high-insulation inorganic high-resistance glaze and its preparation, which can solve the problems of cracking, bonding and incomprehension of semi-sintered green bodies, reduce melting volatilization, improve production efficiency, and reduce grain size. Effect
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Embodiment 1
[0039] The high-insulation inorganic high-resistance glaze used for resistor sheets in this embodiment includes oxide ingredients, and the oxide ingredients include ZnO, Bi 2 o 3 , Sb 2 o 3 、Co 2 o 3 , Mn 3 o 4 , NiO and MgO.
[0040] The mole percentage configuration between the oxide ingredients described in the embodiments of the present invention is as follows:
[0041] ZnO: 88%;
[0042] Bi 2 o 3 : 0.1%;
[0043] Sb 2 o 3 : 3%;
[0044] co 2 o 3 : 0.5%;
[0045] mn 3 o 4 : 0.8%;
[0046] NiO: 1%;
[0047] MgO: 3.5%.
[0048] The preparation method of the high-insulation inorganic high-resistance glaze used for the resistance sheet of the present embodiment comprises the following steps:
[0049] (1), ball milling after mixing the oxide ingredients, deionized water, polyvinyl alcohol solution and dispersant;
[0050] (2) After ball milling for a certain period of time, an inorganic high-resistance glaze with high insulation properties is obtained.
...
Embodiment 2
[0063] The high-insulation inorganic high-resistance glaze used for resistor sheets in this embodiment includes oxide ingredients, and the oxide ingredients include ZnO, Bi 2 o 3 , Sb 2 o 3 、Co 2 o 3 , Mn 3 o 4 , NiO and MgO.
[0064] The mole percentage configuration between the oxide ingredients described in the embodiments of the present invention is as follows:
[0065] ZnO: 90%;
[0066] Bi 2 o 3 : 0.05%;
[0067] Sb 2 o 3 : 3.5%;
[0068] co 2 o 3 :1%;
[0069] mn 3 o 4 : 0.5%;
[0070] NiO: 0.5%;
[0071] MgO: 3%.
[0072] The preparation method of the high-insulation inorganic high-resistance glaze that is used for the resistor sheet in this embodiment comprises the following steps:
[0073] (1), ball milling after mixing the oxide ingredients, deionized water, polyvinyl alcohol solution and dispersant;
[0074] (2) After ball milling for a certain period of time, an inorganic high-resistance glaze with high insulation properties is obtained.
...
Embodiment 3
[0087] The high-insulation inorganic high-resistance glaze used for resistor sheets in this embodiment includes oxide ingredients, and the oxide ingredients include ZnO, Bi 2 o 3 , Sb 2 o 3 、Co 2 o 3 , Mn 3 o 4 , NiO and MgO.
[0088] The mole percentage configuration between the oxide ingredients described in the embodiments of the present invention is as follows:
[0089] ZnO: 91%;
[0090] Bi 2 o 3 : 0.2%;
[0091] Sb 2 o 3 : 4%;
[0092] co 2 o 3 : 1.5%;
[0093] mn 3 o 4 : 1.5%;
[0094] NiO: 2%;
[0095] MgO: 5%.
[0096] The preparation method of the high-insulation inorganic high-resistance glaze that is used for the resistor sheet in the present embodiment comprises the following steps:
[0097] (1), ball milling after mixing the oxide ingredients, deionized water, polyvinyl alcohol solution and dispersant;
[0098] (2) After ball milling for a certain period of time, an inorganic high-resistance glaze with high insulation properties is obtained...
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