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uio-66(nh 2 )-silver sulfide composite material preparation process

A composite material and preparation technology, applied in the field of composite materials, can solve the problems of chemical stability, detection limit and poor linear range, and achieve the effects of improving chemical stability, avoiding inactivation of biomolecules, and low detection limit

Active Publication Date: 2022-07-05
DONGGUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the UIO-66-NH2 of the prior art has poor chemical stability, detection limit and linear range when applied to photoelectric detection, so it needs to be further modified

Method used

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  • uio-66(nh <sub>2</sub> )-silver sulfide composite material preparation process

Examples

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Comparison scheme
Effect test

Embodiment 1

[0023] Example 1: Synthesis of UiO-66 (NH 2 )-the preparation technology of silver sulfide composite material, concrete steps are,

[0024] S1: Synthesis of UiO-66 (NH 2 ), specifically, a, using solvothermal reaction method, ultrasonically dissolve zirconium tetrachloride and 2-aminoterephthalic acid in DMF solution, transfer to the reaction kettle, and react at 120 ° C for 24h; b. The light yellow product obtained after the reaction in the reaction kettle in a was centrifuged, washed 3 times with a washing solvent, dried under vacuum at 80°C, and left to stand to obtain UiO-66 (NH 2 ) solid powder.

[0025] S2: A layer of UiO-66 (NH) was modified on FTO glass 2 ), specifically, a, the FTO glass is cut into sheets, followed by ultrasonic cleaning in absolute ethanol, deionized water for 3 minutes, b, the cleaned sheet FTO glass in step a is dried with nitrogen, and 2.5 mg mL -1 UiO-66(NH 2 ) dropwise evenly on the surface of the FTO glass, and air-dry naturally at room ...

Embodiment 2

[0027] Example 2: UiO-66 (NH 2 )-silver sulfide composite

[0028] Adopt the technique in embodiment 1, make UiO-66(NH 2 )-silver sulfide composite.

[0029] For the prepared UiO-66 (NH 2)-silver sulfide test its SEM image, the results are as follows figure 1 shown. from figure 1 It can be seen that the synthesized UiO-66 (NH 2 )-silver sulfide, with a narrow band gap, can use semiconductor materials with narrow band gaps to have better absorbance in the visible light region, avoiding the inactivation of biomolecules caused by ultraviolet light.

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Abstract

The invention relates to the field of composite materials, in particular to a kind of UiO-66 (NH 2 )-the preparation process of silver sulfide composite material. UiO‑66(NH 2 )-the preparation technology of silver sulfide composite material, is characterized in that: may further comprise the steps: S1: synthesis UiO-66 (NH 2 ); S2: a layer of UiO‑66 (NH 2 ); S3: in UiO‑66 (NH 2 ) compound surface to grow Ag 2 S, to obtain UiO‑66 (NH 2 )‑Silver sulfide composite. The invention has simple preparation process, low preparation cost, good chemical stability, low detection limit and wide linear range.

Description

technical field [0001] The invention relates to the field of composite materials, in particular to UiO-66 (NH 2 )-silver sulfide composite material preparation process. Background technique [0002] Metal-organic frameworks (MOFs) represent novel microporous materials formed by a network of transition metal ions linked by organic ligands. Due to their high surface area, high porosity, and tunability, MOFs are considered potential candidates for gas storage, absorption, microelectronics and catalysis. [0003] Among the MOFs, Zr-based UIO-66-NH 2 As a common Zr-based MOF, it has been widely studied due to its good thermal stability, large surface area and good photocatalytic performance, and has been used in various occasions such as photocatalysts, organic pollutant removal agents, and tumor markers photodetection. [0004] However, the prior art UIO-66-NH2, when applied to photoelectric detection, has poor chemical stability, detection limit and linear range, so it needs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L87/00C08K3/30
CPCC08K3/30C08K2003/3009C08K2201/011C08L87/00
Inventor 程发良宾倩韵张敏谢永泽谢世磊柳鹏王寿山谢东
Owner DONGGUAN UNIV OF TECH
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