A kind of chalcogenide glass substrate low residual reflectance anti-reflection film and preparation method thereof

A technology of chalcogenide glass and residual reflection, which is applied in optical components, instruments, optics, etc., can solve problems such as chalcogenide glass surface deformation, substrate deformation, and film release, so as to improve surface quality and mechanical properties, and increase firmness degree of effect

Active Publication Date: 2021-10-15
TIANJIN JINHANG INST OF TECH PHYSICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the internal stress is released under the action of factors such as heating, baking and high-energy particle impact during the subsequent coating process, resulting in poor surface deformation of the chalcogenide glass
In addition, due to the high thermal expansion coefficient of chalcogenide glass (12~20×10 -6 K -1 @20℃~200℃), which is much higher than the thermal expansion coefficient of common infrared optical materials (such as Ge:6.1×10 -6 K -1 @20℃~200℃, ZnS: 6.6×10 -6 K -1 @20℃~200℃), after the coating is finished, during the cooling process of the substrate, due to the difference in the expansion coefficient of the film layer and the substrate, the thermal stress of the film layer is likely to be too large, causing the substrate to deform or even peel off
At present, there are few published studies on the preparation technology of infrared anti-reflection coatings for chalcogenide glass, and there are no reports on long-wave infrared broadband anti-reflection films with a residual reflectivity lower than 0.3%.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of chalcogenide glass substrate low residual reflectance anti-reflection film and preparation method thereof
  • A kind of chalcogenide glass substrate low residual reflectance anti-reflection film and preparation method thereof
  • A kind of chalcogenide glass substrate low residual reflectance anti-reflection film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The invention provides a method for preparing an anti-reflection film with low residual reflectance on a chalcogenide glass substrate, comprising the following steps:

[0038] (1) Substrate cleaning: clean the surface of the chalcogenide glass to be coated with a clean degreasing gauze or cotton cloth dipped in polishing powder solution and detergent;

[0039] (2) Substrate heating: Baking and heating the coated parts before coating to increase the temperature of the substrate.

[0040] (3) Substrate pre-cleaning: Before coating, use an ion source to pre-clean the coated parts for 5-10 minutes.

[0041] (4) Film structure design: chalcogenide glass is selected as the substrate material, Ge is the coating material with high refractive index, ZnS is the coating material with intermediate refractive index, and YF is the coating material with low refractive index 3 (or YbF 3 ), using double-sided coating to achieve low residual reflectivity anti-reflection film, the film ...

Embodiment 1

[0049] Chalcogenide glass materials (As 40 Se 60 ) as the substrate, the film structure such as figure 1 As shown, the spectral curve of the substrate before coating is as follows figure 2 shown.

[0050] (1) Use a degreasing gauze dipped in a mixture of alcohol and ether (1:1) to initially wipe the substrate. Then use a diamond polishing solution with a particle size of W0.1 to evenly wipe the surface of the lens to be coated, and finally wipe the surface of the substrate with a mixture of alcohol and ether (1:1) with absorbent gauze or cotton cloth, and check the surface of the substrate with the breath method until No oil, dust, scratches.

[0051] (2) Clean the vacuum chamber and place Ge, ZnS and YbF 3 The film material is placed in the evaporation crucible and the evaporation boat respectively.

[0052] (3) Put the cleaned substrate in the coating fixture, and then place the coating fixture on the workpiece rack in the vacuum chamber.

[0053] (4) Turn on the vac...

Embodiment 2

[0063] Chalcogenide glass materials (Ge 10 As 40 Se 50 ) as the substrate, the film structure such as figure 1 As shown, the spectral curve of the substrate before coating is as follows Figure 4 shown.

[0064] (1) Use a degreasing gauze dipped in a mixture of alcohol and ether (1:1) to initially wipe the substrate. Then use a diamond polishing solution with a particle size of W0.1 to evenly wipe the surface of the lens to be coated, and finally wipe the surface of the substrate with a mixture of alcohol and ether (1:1) with absorbent gauze or cotton cloth, and check the surface of the substrate with the breath method until No oil, dust, scratches.

[0065] (2) Clean the vacuum chamber and place Ge, ZnS and YbF 3 The film material is placed in the evaporation crucible and the evaporation boat respectively.

[0066] (3) Put the cleaned substrate in the coating fixture, and then place the coating fixture on the workpiece rack in the vacuum chamber.

[0067] (4) Turn on ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
transition temperatureaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to view more

Abstract

The invention relates to a chalcogenide glass substrate low residual reflectance anti-reflection film and a preparation method thereof, belonging to the technical field of vacuum coating. The present invention realizes the preparation of low residual reflectance anti-reflection film with average transmittance greater than 98% and average residual reflectance less than 0.3% on a chalcogenide glass substrate by means of film system design and process optimization. The film system on both sides of the present invention is a symmetrical structure, and the basic form of the film system structure on both sides is: Sub / x 1 x 2 M x 3 x 4 M x 5 x 6 x 7 M x 8 x 9 M / Air, where H, M, and L stand for high-refractive-index film, medium-refractive-index film and low-refractive-index film respectively. performance.

Description

technical field [0001] The invention belongs to the technical field of vacuum coating, and in particular relates to an anti-reflection film with low residual reflectance on a chalcogenide glass substrate and a preparation method thereof. Background technique [0002] Chalcogenide glass refers to the glass formed by mainly S, Se, and Te in the VIA group elements of the periodic table of elements and introducing a certain amount of other metalloid elements. Its refractive index temperature coefficient dn / dT is small, for example, the average value of dn / dT of germanium (Ge) material in the 3-12μm band is 400×10 -6 K -1 , while the dn / dT of a typical Se-based chalcogenide glass is 50×10 -6 K -l ~90×10 -6 K -1 , has excellent athermal performance; the refractive index is low (2.0-3.0), and the refractive index dispersion characteristics are equivalent to zinc selenide in the long-wave band, and has excellent achromatic performance. In addition, chalcogenide glasses have th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/115
CPCG02B1/115
Inventor 冷健刘华松季一勤庄克文何家欢
Owner TIANJIN JINHANG INST OF TECH PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products