Crimping type IGBT thermal network model modeling method and related device

Abstract

The invention discloses a crimping type IGBT thermal network model modeling method and a related device. The method includes: constructing a three-dimensional model based on the entity crimping type IGBT, importing the three-dimensional model into finite element simulation software, setting temperature monitoring points at key nodes of each layer of the crimping type IGBT of the three-dimensionalmodel, setting boundary conditions in the finite element simulation software, and enabling the finite element simulation software to output maximum junction temperature, temperature information of thetemperature monitoring points and thermal power; when the difference value between the maximum junction temperature and the junction temperature measured according to the entity crimping type IGBT issmaller than a preset threshold value, calculating and obtaining a transient thermal impedance curve according to the temperature information and the thermal power; carrying out data fitting on the curve to obtain heat group parameters; and establishing the crimping type IGBT thermal network model. The technical problems that in the prior art, the IGBT thermal network model is established throughthe thermal group parameters of the data manual, so that the IGBT thermal network model cannot calculate the temperature distribution information of each layer of the IGBT, and the calculation precision is not high are solved.

Description

technical field [0001] The present application relates to the technical field of IGBTs, and in particular, to a method for modeling a thermal network model of a crimp IGBT and a related device. Background technique [0002] Due to its high reliability and short-circuit characteristics after failure, crimp IGBTs are increasingly used in power conversion fields such as flexible DC transmission MMC modules and electric vehicles. [0003] The inside of the crimp IGBT is a layered structure composed of chips and metal, which is pressed by external pressure during operation to ensure the reliable electrical connection between the layers. The power loss of the crimp IGBT will occur during the operation. The power loss is mainly composed of two parts, one is the conduction loss and the other is the switching loss. The conduction loss is the loss caused by the large current flowing through the crimp IGBT in the on state. The greater the current, the greater the voltage drop between ...

AI Technical Summary

Problems solved by technology

[0005] This application provides a method for modeling the thermal network model of a press-connect type IGBT and related devices, which solves the problem that the IGBT thermal network model established by the thermal group parameters in the data book in the prior art cannot be calculated to obtain the IGBT thermal network model. The temperature distribution information of each layer and the technical problem of low calculation accuracy

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