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Parameter characteristic detection device of power semiconductor device

A technology for power semiconductors and parameter characteristics, which is applied in the testing of single semiconductor devices, measuring devices, bipolar transistors, etc., can solve the problem of inconvenient detection of device parameter characteristics, and achieve the effect of good detection effect, convenient use and fast parameter characteristics.

Active Publication Date: 2020-06-02
HEBEI UNIV OF TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art, propose a parameter characteristic detection device of power semiconductor devices, solve the problem of inconvenient detection of device parameter characteristics, and realize fast and accurate detection of device parameter characteristics

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  • Parameter characteristic detection device of power semiconductor device
  • Parameter characteristic detection device of power semiconductor device
  • Parameter characteristic detection device of power semiconductor device

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Embodiment Construction

[0035] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0036] In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", "connection" and "communication" should be understood in a broad sense, for example, it can be a fixed connection, or It can be a detachable connection or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention based on specific situations.

[0037] The embodiments of the present invention will be described in further detail below in conjunction with the accompanying drawi...

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Abstract

The invention discloses a parameter characteristic detection device for a power semiconductor device. The parameter characteristic detection device comprises a control board, a power board, a displayscreen, and a DC stabilized power supply, wherein the control board is an electronic circuit board with a DSP chip, and a signal collection circuit, a control circuit, a protection circuit, and a control board power supply circuit are integrated on the control board; the signal acquisition circuit, the control circuit, the protection circuit and the control panel power supply circuit are connectedwith the DSP chip; the signal acquisition circuit is provided with an analog signal interface and a digital signal interface used for receiving various analog signals and digital signals; the signalacquisition circuit acquires signals such as voltage and current and sends the signals to the DSP for calculation of device parameter characteristics, and finally sending data to the display screen through using the communication circuit; the control panel power supply circuit provides electric energy for the whole control panel; the control circuit controls the power board to work; and the parameter characteristic detection device solves the problem that the device parameter properties are inconvenient to detect, and realizes rapid and accurate detection of the parameter properties of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor device detection, in particular to a parameter characteristic detection device of a power semiconductor device. Background technique [0002] With the continuous development of science and technology, power electronics technology has a closer relationship with all areas of our lives. Power semiconductor devices have played a decisive role in the development of power electronics technology. With continuous upgrading, power semiconductor devices have already possessed good working performance. With its significant advantages such as high input impedance, low driving power, fast switching speed, and good high-frequency performance, it has been widely used in communications, power systems, new energy and other fields. During the use of the device, it is necessary to know its relevant parameter characteristics, so as to avoid damage to the device and unnecessary economic losses caused by i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2623G01R31/261G01R31/2621G01R31/2608
Inventor 李练兵孙腾达董德林常文祥张金龙谢朋朋
Owner HEBEI UNIV OF TECH