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Composite material and its preparation method and quantum dot light-emitting diode

A technology of quantum dot light-emitting and composite materials, which is applied in the fields of quantum dot light-emitting diodes, composite materials and their preparation, can solve problems such as low electron transmission efficiency, and achieve the effects of improving electron transmission efficiency, reducing defect recombination and simple process

Active Publication Date: 2021-07-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a composite material and its preparation method and quantum dot light-emitting diodes, aiming at solving the technical problem of low electron transmission efficiency due to surface defects in existing electron transport materials

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  • Composite material and its preparation method and quantum dot light-emitting diode

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preparation example Construction

[0025] On the other hand, the embodiment of the present invention also provides a method for preparing a composite material, comprising the following steps:

[0026] S01: provide metal salt and [6,6]-phenyl-C61-butyric acid isomethyl ester;

[0027] S02: dissolving the metal salt in a first solvent, and performing heat treatment under a first basic condition to obtain a first solution;

[0028] S03: dissolving the [6,6]-phenyl-C61-butyric acid isomethyl ester in a second solvent, and performing heat treatment under a second basic condition to obtain a second solution;

[0029] S04: mixing the first solution and the second solution to obtain a precursor solution;

[0030] S05: Deposit the precursor solution on the substrate, and perform annealing treatment to obtain the composite material.

[0031] In the embodiment of the present invention, a simple sol-gel method is used to prepare n-type metal oxide nanoparticles and [6,6]-phenyl-C61-butyric acid bound to the surface of th...

Embodiment 1

[0053] Taking the use of titanium acetate, ethanol, potassium hydroxide, and PCBM as examples for a detailed introduction.

[0054] 1) Add an appropriate amount of titanium acetate to 50ml of ethanol to form a solution with a total concentration of 0.5M. Stir at 70°C to dissolve. Add a solution of potassium hydroxide dissolved in 10ml ethanol (the molar ratio of potassium hydroxide to titanium ions is 3.5-4.5:1, pH=12), and continue to stir at 70°C for 4 hours to form precursor solution A.

[0055] 2) Disperse an appropriate amount of PCBM in 10ml of ethanol, add a solution of potassium hydroxide dissolved in 10ml of ethanol (the molar ratio of sodium hydroxide to PCBM is 1-1.5:1, pH=12), stir at 70°C for 2h, A PCBA solution is formed. (Molar ratio: PCBA:Ti 4+ =1~2:1).

[0056] 3) After mixing the precursor solution A and the PCBA solution evenly, continue stirring at 70° C. for 2 hours to form the precursor solution B.

[0057] 4) Subsequently, after the solution is cool...

Embodiment 2

[0059] Taking the use of zinc nitrate, methanol, ethanolamine, and PCBM as examples for a detailed introduction.

[0060] 1) Add an appropriate amount of zinc nitrate to 50ml of methanol to form a solution with a total concentration of 0.5M. Stir to dissolve at 60°C. Add a solution of ethanolamine dissolved in 10ml methanol (the molar ratio of ethanolamine to zinc ions is 1.8-2.5:1, pH=12), and continue to stir at 60°C for 4h to form precursor solution A.

[0061] 2) Disperse an appropriate amount of PCBM in 10ml of methanol, add a solution of ethanolamine dissolved in 10ml of methanol (the molar ratio of ethanolamine to PCBM is 1-1.5:1, pH=12), and stir at 60°C for 2 hours to form a PCBA solution. (Molar ratio: PCBA:Zn 2+ =1~2:1).

[0062] 3) After mixing the precursor solution A and the PCBA solution evenly, continue stirring at 60° C. for 2 hours to form the precursor solution B.

[0063] 4) Subsequently, after the solution is cooled, spin-coat the treated ITO with a co...

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Abstract

The invention belongs to the field of materials, and in particular relates to a composite material, a preparation method thereof, and a quantum dot light-emitting diode. The composite material includes n-type metal oxide nanoparticles and [6,6]-phenyl-C61-butyric acid bound on the surface of the n-type metal oxide nanoparticles. The composite material is used in the electron transport layer of the quantum dot light-emitting diode, which can passivate the interface between the quantum dot light-emitting layer and the electron transport layer, thereby reducing the defect recombination of the charge during the transport process, which is conducive to improving the electron transport efficiency and ultimately enhancing the device. luminous efficiency and display performance.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to a composite material, a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Since the electrical phenomenon was discovered by some researchers in the 18th century, people began to gradually understand semiconductor materials. There are many classifications of semiconductor materials. According to the characteristics of carriers, they can be divided into intrinsic semiconductors, P-type semiconductors, and N-type semiconductors; according to their chemical composition, they can be subdivided into elemental semiconductors, compound semiconductors, and organic semiconductors. Among many semiconductor materials, transition metal oxide semiconductor materials not only have the basic physical and chemical properties unique to transition metal oxides, but also take advantage of the characteristics of semiconductor materials to exhibit un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K85/00H10K50/115H10K50/16H10K50/00H10K71/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION