Glass frit for front silver paste of monocrystalline silicon solar cell and its preparation method and application

A solar cell and glass frit technology, applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve problems such as low opening voltage of electrical properties, corrosion of passivation film, and glass corrosion. Achieve the effects of low series resistance, low contact resistance and strong corrosion

Active Publication Date: 2021-08-06
CHANGZHOU JUHE NEW MATERIAL CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the later application, when passing through the sintering furnace, the passivation film cannot be corroded at a suitable sintering temperature
If the sintering temperature is too high, or the sintering time in the furnace is too long, the glass will continue to corrode, and the PN junction (the source of the cell’s power generation) will be corroded, and the electrical performance will be low opening voltage and low efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Glass frit for front silver paste of monocrystalline silicon solar cell and its preparation method and application
  • Glass frit for front silver paste of monocrystalline silicon solar cell and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] In some embodiments, the preparation method comprises:

[0030] Prepare the raw materials according to the composition of the main glass frit and the auxiliary glass frit in the glass frit for the front silver paste of the monocrystalline silicon solar cell, mix the raw materials of the main glass frit or the auxiliary glass frit evenly, and then carry out the process at 1000-1300°C Melting for 30-90 minutes; and,

[0031]The glass melt obtained by melting is subjected to quenching treatment, and then ball milled and dried to obtain the main glass frit or auxiliary glass frit, and the glass frit for the front silver paste of the monocrystalline silicon solar cell.

[0032] Further, the preparation method includes: mixing and homogenizing the raw materials of the main glass frit or the auxiliary glass frit by using a twin-roller or a three-dimensional mixer.

[0033] Further, the preparation method includes: performing the quenching treatment by quenching with deionized...

Embodiment 1

[0054] 1. The main glass frit A for the front silver paste of monocrystalline silicon solar cells, its components are: 60mol% TeO 2 , 15mol% Li 2 O, 15mol% ZnO, 10mol% Na 2 O, the preparation steps are: use a muffle furnace to melt the glass raw materials at 1300°C for 1 hour, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to mill the glass to obtain powder with a suitable particle size Shaped glass frit, the particle size distribution of the obtained glass frit D50≤4μm.

[0055] 2. Auxiliary glass frit B for front silver paste of monocrystalline silicon solar cell, its components are: 40mol%PbO, 20mol%Bi 2 o 3 , 20mol% Li 2 O, 10mol% SiO 2 , 10mol% WO 3 . Prepare according to the method of step 1 to obtain auxiliary glass frit B.

[0056] 3. the main glass frit A that 2wt% step 1 makes, the auxiliary glass frit B that 0.4wt% step 2 makes, 87.6wt% conductive silver powder, 3wt% polyvinyl butyral, 3wt% ethyl c...

Embodiment 2

[0058] 1. The main glass frit A for the front silver paste of monocrystalline silicon solar cells, its components are: 55mol% TeO 2 , 30mol% Li 2 O, 5mol% ZnO, 10mol% CuO, the preparation steps are: use a muffle furnace to melt the glass raw materials at 1000°C for 30 minutes, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to process the glass Ball milling to obtain powdered glass frit with suitable particle size, the particle size distribution D50 of the obtained glass frit is ≤ 4 μm.

[0059] 2. Auxiliary glass frit B for front silver paste of monocrystalline silicon solar cell, its components are: 50mol% PbO, 40mol% Bi 2 o 3 , 9mol% Li 2 O, 1mol% MoO 3 , the preparation steps are: use a muffle furnace to melt the glass raw materials at 1000°C for 30 minutes, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to mill the glass to obtain a powder with a su...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a glass frit for front silver paste of a monocrystalline silicon solar cell, a preparation method and application thereof. Said comprises main glass frit and auxiliary glass frit, and main glass frit comprises TeO 2 55~90mol%, Li 2 O 1~30mol%, ZnO 5~20mol%, X 1~10mol%, auxiliary glass frit includes PbO 1~50mol%, Bi 2 o 3 1~40mol%, Li 2 O 1 to 30 mol% and Y 1 to 30 mol%. The main glass frit and auxiliary glass frit used in the front silver paste of the monocrystalline silicon solar cell of the present invention can make the silver paste have the excellent properties of both, and have the characteristics of low series resistance, high opening pressure and high tensile force. After the main glass frit and the auxiliary glass frit are compounded, they are not sensitive to temperature changes, so that the glass has a wide sintering window. The front silver paste of the present invention can be applied not only to single-crystal PERC silicon wafers, but also to double-sided aluminum oxide single-crystal silicon wafers.

Description

technical field [0001] The invention relates to a glass frit, in particular to a glass frit for a front silver paste of a monocrystalline silicon solar cell and a preparation method thereof, as well as a front silver paste prepared therefrom and an application thereof, belonging to the technical field of conductive paste. Background technique [0002] As we all know, the main factors affecting the efficiency loss of solar cells are: grid line shielding factors, grid lines and their contact resistance factors, and carrier recombination factors. In order to solve the problem of carrier recombination, Passivated Emitter Rear Contact (PERC) technology is mainly used in the market, which greatly reduces the surface recombination rate and improves the light reflection of the back surface. With the development of the market, there is also the use of double-sided alumina technology, that is, a layer of aluminum oxide film is also coated on the front of the monocrystalline silicon so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C03C12/00C03C8/24H01B1/16H01B1/22H01B13/00H01L31/0224
CPCC03C8/24C03C12/00H01B1/16H01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 熊志凯任益超
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap