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Frit for front silver paste of monocrystalline silicon solar cell and preparation method and application of frit

A solar cell and glass frit technology, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc. Achieve high tensile properties, low contact resistance, and strong corrosive effects

Active Publication Date: 2020-08-07
CHANGZHOU JUHE NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the later application, when passing through the sintering furnace, the passivation film cannot be corroded at a suitable sintering temperature
If the sintering temperature is too high, or the sintering time in the furnace is too long, the glass will continue to corrode, and the PN junction (the source of the cell’s power generation) will be corroded, and the electrical performance will be low opening voltage and low efficiency.

Method used

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  • Frit for front silver paste of monocrystalline silicon solar cell and preparation method and application of frit
  • Frit for front silver paste of monocrystalline silicon solar cell and preparation method and application of frit

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preparation example Construction

[0029] In some embodiments, the preparation method comprises:

[0030] Respectively prepare raw materials according to the composition of the main glass frit and the auxiliary glass frit in the glass frit for the front silver paste of the monocrystalline silicon solar cell, mix the raw materials of the main glass frit or the auxiliary glass frit evenly, and then carry out Melting for 30-90 minutes; and,

[0031]The glass melt obtained by melting is subjected to quenching treatment, and then ball milled and dried to obtain the main glass frit or auxiliary glass frit, and the glass frit for the front silver paste of the monocrystalline silicon solar cell.

[0032] Further, the preparation method includes: mixing and homogenizing the raw materials of the main glass frit or the auxiliary glass frit by using a twin-roller or a three-dimensional mixer.

[0033] Further, the preparation method includes: performing the quenching treatment by quenching with deionized water or quenchin...

Embodiment 1

[0054] 1. The main glass frit A for the front silver paste of monocrystalline silicon solar cells, its components are: 60mol% TeO 2 , 15mol% Li 2 O, 15mol% ZnO, 10mol% Na 2 O, the preparation steps are: use a muffle furnace to melt the glass raw materials at 1300°C for 1 hour, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to mill the glass to obtain powder with a suitable particle size Shaped glass frit, the particle size distribution of the obtained glass frit D50≤4μm.

[0055] 2. Auxiliary glass frit B for front silver paste of monocrystalline silicon solar cell, its components are: 40mol%PbO, 20mol%Bi 2 o 3 , 20mol% Li 2 O, 10mol% SiO 2 , 10mol% WO 3 . Prepare according to the method of step 1 to obtain auxiliary glass frit B.

[0056] 3. the main glass frit A that 2wt% step 1 makes, the auxiliary glass frit B that 0.4wt% step 2 makes, 87.6wt% conductive silver powder, 3wt% polyvinyl butyral, 3wt% ethyl c...

Embodiment 2

[0058] 1. The main glass frit A for the front silver paste of monocrystalline silicon solar cells, its components are: 55mol% TeO 2 , 30mol% Li 2 O, 5mol% ZnO, 10mol% CuO, the preparation steps are: use a muffle furnace to melt the glass raw materials at 1000°C for 30 minutes, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to process the glass Ball milling to obtain powdered glass frit with suitable particle size, the particle size distribution D50 of the obtained glass frit is ≤ 4 μm.

[0059] 2. Auxiliary glass frit B for front silver paste of monocrystalline silicon solar cell, its components are: 50mol% PbO, 40mol% Bi 2 o 3 , 9mol% Li 2 O, 1mol% MoO 3 , the preparation steps are: use a muffle furnace to melt the glass raw materials at 1000°C for 30 minutes, after fully homogenizing, use the water quenching method to quench the glass, and use a planetary ball mill to mill the glass to obtain a powder with a su...

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Abstract

The invention discloses frit for front silver paste of a monocrystalline silicon solar cell as well as a preparation method and application of the frit. The glass frit comprises a main glass frit andan auxiliary glass frit, wherein the main glass frit comprises 55-90 mol% of TeO2, 1-30 mol% of Li2O, 5-20 mol% of ZnO and 1-10 mol% of X; and the auxiliary glass frit comprises 1-50 mol% of PbO, 1-40mol% of Bi2O3, 1-30 mol% of Li2O and 1-30 mol% of Y. The main glass frit and the auxiliary glass frit for the front silver paste of the monocrystalline silicon solar cell are compounded for use, so that the silver paste has excellent properties of the main glass frit and the auxiliary glass frit, and has the characteristics of low series resistance, high open-circuit voltage and high tension. After the main glass frit and the auxiliary glass frit are compounded, the glass is not sensitive to temperature change, so that the glass has a wide sintering window. The front silver paste can be applied to a single crystal PERC silicon wafer and can also be applied to a double-sided aluminum oxide monocrystalline silicon wafer.

Description

technical field [0001] The invention relates to a glass frit, in particular to a glass frit for a front silver paste of a monocrystalline silicon solar cell and a preparation method thereof, as well as a front silver paste prepared therefrom and an application thereof, belonging to the technical field of conductive paste. Background technique [0002] As we all know, the main factors affecting the efficiency loss of solar cells are: grid line shielding factors, grid lines and their contact resistance factors, and carrier recombination factors. In order to solve the problem of carrier recombination, Passivated Emitter Rear Contact (PERC) technology is mainly used in the market, which greatly reduces the surface recombination rate and improves the light reflection of the back surface. With the development of the market, there is also the use of double-sided alumina technology, that is, a layer of aluminum oxide film is also coated on the front of the monocrystalline silicon so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00C03C8/24H01B1/16H01B1/22H01B13/00H01L31/0224
CPCC03C8/24C03C12/00H01B1/16H01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 熊志凯任益超
Owner CHANGZHOU JUHE NEW MATERIAL CO LTD
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