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A method for removing contamination impurities on the surface of silicon wafers

A silicon wafer surface and silicon wafer technology, which is applied in the field of removing contamination and impurities on the surface of silicon wafers, and can solve problems such as device failure

Active Publication Date: 2022-04-15
山东九思新材料科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the situation of device failure caused by pollution on the surface of silicon wafers, a method for removing contamination impurities on the surface of silicon wafers is now provided to solve the above technical problems

Method used

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  • A method for removing contamination impurities on the surface of silicon wafers

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Comparison scheme
Effect test

Embodiment 1

[0038] A method for removing contamination impurities on the surface of a silicon wafer, the specific implementation is as follows:

[0039] (1) Put the silicon wafer to be cleaned into a 5000ml beaker, and then add deionized water into beaker I to ensure that the silicon wafer to be cleaned is completely submerged in water, then move the beaker into an ultrasonic cleaner, set the temperature at 80-90 ℃, ultrasonic cleaning for 20-30 minutes;

[0040] (2) Put the silicon wafer cleaned in step (1) into the beaker II filled with cleaning solution A, wherein cleaning solution A includes 3 parts of concentrated hydrochloric acid and 97 parts of deionized water A, to ensure that all silicon wafers are submerged in cleaning solution A , put the beaker II into the ultrasonic cleaner, and take it out after ultrasonic cleaning at 70-80°C for 30-60 minutes;

[0041] (3) Put the silicon wafer cleaned in step (2) into the beaker III filled with cleaning solution B, wherein the cleaning s...

Embodiment 2

[0046] A method for removing contamination impurities on the surface of a silicon wafer, the specific implementation is as follows:

[0047] (1) Put the silicon wafer to be cleaned into a 5000ml beaker, and then add deionized water into beaker I to ensure that the silicon wafer to be cleaned is completely submerged in water, then move the beaker into an ultrasonic cleaner, set the temperature at 80-90 ℃, ultrasonic cleaning for 20-30 minutes;

[0048] (2) Put the silicon wafer cleaned in step (1) into the beaker II filled with cleaning solution A, wherein cleaning solution A includes 4 parts of concentrated hydrochloric acid and 96 parts of deionized water A, to ensure that all silicon wafers are submerged in cleaning solution A , put the beaker II into the ultrasonic cleaner, and take it out after ultrasonic cleaning at 70-80°C for 30-60 minutes;

[0049] (3) Put the silicon wafer cleaned in step (2) into the beaker III containing cleaning solution B, wherein the cleaning so...

Embodiment 3

[0054] A method for removing contamination impurities on the surface of a silicon wafer, the specific implementation is as follows:

[0055] (1) Put the silicon wafer to be cleaned into a 5000ml beaker, and then add deionized water into beaker I to ensure that the silicon wafer to be cleaned is completely submerged in water, then move the beaker into an ultrasonic cleaner, set the temperature at 80-90 ℃, ultrasonic cleaning for 20-30 minutes;

[0056] (2) Put the silicon wafer cleaned in step (1) into the beaker II filled with cleaning solution A, wherein cleaning solution A includes 5 parts of concentrated hydrochloric acid and 95 parts of deionized water A to ensure that all silicon wafers are submerged in cleaning solution A , put the beaker II into the ultrasonic cleaner, and take it out after ultrasonic cleaning at 70-80°C for 30-60 minutes;

[0057] (3) Put the silicon wafer cleaned in step (2) into the beaker III filled with cleaning solution B, wherein the cleaning so...

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Abstract

The invention discloses a method for removing contamination impurities on the surface of silicon wafers, which belongs to the technical field of semiconductor device cleaning; the method for removing contamination impurities on the surface of silicon wafers is divided into the following steps: washing with water, acid washing, alkali washing, organic solvent washing and vacuum dry. This cleaning method has the following advantages: 1. After inorganic pollutants, organic pollutants and microorganisms are cleaned by the cleaning solution, they all become ionic states that are easily soluble in water or volatile gas states, and are not easy to remain on the surface of the silicon wafer; 2. . The materials used in the cleaning agent are easy to obtain and easy to store; 3. The cleaning materials used are environmentally friendly and low in cost; 4. The cleaning liquid is easy to recycle.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device cleaning, and in particular relates to a method for removing contamination impurities on the surface of a silicon wafer. Background technique [0002] Silicon wafers must be strictly cleaned in the production of semiconductor devices. Trace contamination can also lead to device failure. The purpose of cleaning is to remove surface contamination impurities, including organic and inorganic substances. Some of these impurities exist in the atomic state or ion state, and some exist in the form of thin films or particles on the surface of the silicon wafer. Organic contamination includes photoresists, organic solvent residues, synthetic waxes, and grease or fibers from human contact with devices, tools, and utensils. Inorganic pollution includes heavy metals such as gold, copper, iron, chromium, etc., which seriously affect the lifetime of minority carriers and surface conductance; alka...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02C11D7/08C11D7/10C11D7/26
CPCH01L21/02057C11D7/08C11D7/10C11D7/267C11D11/0047
Inventor 石坚
Owner 山东九思新材料科技有限责任公司