A device with a device epitaxial structure for improving the reverse withstand voltage of a power Schottky diode and its preparation method
A Schottky diode, reverse withstand voltage technology, applied in diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as improper design of device epitaxial structure and limited material performance
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Embodiment 1
[0031] The preparation method of the device epitaxial structure for improving the reverse withstand voltage of the power Schottky diode comprises the steps of:
[0032] 1) On the Si substrate, use the metal organic chemical vapor deposition (MOCVD) method to epitaxial the AlN / AlGaN transition layer at a high temperature, and the temperature is higher than 1100 degrees Celsius;
[0033] 2) On the AlN / AlGaN transition layer, a composite buffer layer is grown at high temperature. During the growth of the first 50% of the thickness of GaN, an AlGaN insertion layer with a gradual change in composition is inserted into the growth composition, and the Al composition is linearly changed from 0 to 20%. layer, and the last 50% of the thickness is a single GaN layer, thus forming a composite buffer layer.
[0034] 3) On the composite buffer layer, a channel layer is grown at a high temperature, and a composite structure of a GaN layer and an AlN layer grown at a high temperature;
[003...
Embodiment 2
[0037] like figure 1 As shown, the device epitaxial structure for improving the reverse withstand voltage of the power Schottky diode, its structure includes from bottom to top:
[0038] (1) Si substrate layer;
[0039] (2) The transition layer is AlN with a thickness of 100nm and AlGaN with a thickness of 700nm;
[0040] (3) Composite buffer layer with a thickness of 4 μm, including 3 AlGaN insertion layers, the Al composition of each insertion layer changes linearly from 0 to 20%, and the thickness of each layer is 25nm, all insertion layers are located near the substrate One side of the bottom layer also includes a GaN layer. The AlGaN insertion layer is an inclined high barrier insertion layer. The barrier of each insertion layer points to the substrate from high to low. Through stress control, an upward polarization electric field is generated, thereby offsetting Weaken the applied electric field diffused from the top, thereby increasing the breakdown voltage of the dev...
Embodiment 3
[0044] The device epitaxial structure for improving the reverse withstand voltage of the power Schottky diode, its structure includes from bottom to top:
[0045] (1) sapphire substrate layer;
[0046] (2) The transition layer is AlN with a thickness of 20nm and AlGaN with a thickness of 80nm;
[0047] (3) Composite buffer layer with a thickness of 5 μm, including 2 AlGaN insertion layers, the Al composition of each insertion layer changes linearly from 0 to 20%, and the thickness of each layer is 30nm, all insertion layers are located near the substrate One side of the bottom layer also includes a GaN layer. The AlGaN insertion layer is an inclined high barrier insertion layer. The barrier of each insertion layer points to the substrate from high to low. Through stress control, an upward polarization electric field is generated, thereby offsetting Weaken the applied electric field diffused from the top, thereby increasing the breakdown voltage of the device;
[0048] (4) Th...
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