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Imaging device

A technology of camera device and color filter, applied in radiation control device, image communication, television, etc., can solve the problems of reduced sensitivity and difficulty in focusing, etc.

Active Publication Date: 2020-09-15
SONY GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, when the sensitivity of the imaging pixels is optimized, the sensitivity of the phase difference detection pixels decreases, and especially when the subject is dark, it is difficult to accurately perform focusing

Method used

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Embodiment Construction

[0060] Hereinafter, embodiments of the present technology will be explained with reference to the accompanying drawings.

[0061] Configuration example of solid-state imaging device

[0062] figure 1 is a block diagram showing an embodiment of a solid-state imaging device to which the present technology is applied. Hereinafter, the configuration of a surface-illuminated complementary metal oxide semiconductor (CMOS: complementary metal oxide semiconductor) image sensor, which is an amplification type solid-state imaging device, will be described. The present technology is not limited to being applied to a surface-illuminated CMOS image sensor, but can also be applied to a back-illuminated CMOS image sensor, other amplification type solid-state imaging devices, or images such as a charge coupled device (CCD: charge coupled device) In charge transfer solid-state imaging devices such as sensors.

[0063] figure 1 The illustrated CMOS image sensor 10 includes a pixel array por...

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Abstract

The present invention provides an imaging device comprising: a first photoelectric conversion unit provided in a semiconductor substrate; a first color filter disposed above the semiconductor substrate, wherein the first color filter corresponds to the first photoelectric conversion unit; a second photoelectric conversion unit located in the semiconductor substrate; a second color filter providedabove the semiconductor substrate, wherein the second color filter corresponds to the second photoelectric conversion unit; a light shielding film provided between the second color filter and the semiconductor substrate, wherein the light shielding film overlaps a part of the second photoelectric conversion unit in plan view, the first color filter includes a first color filter material, the second color filter includes the first color filter material, and the second color filter is thinner than the first color filter.

Description

[0001] This application is a divisional application of a patent application with an application number of 201410766332.0 with an application date of December 11, 2014 and an invention title of "Solid-State Imaging Device, Solid-State Imaging Device Manufacturing Method, and Electronic Equipment". technical field [0002] The present technology relates to a solid-state imaging device, a method for manufacturing the solid-state imaging device, and electronic equipment, and more particularly, to a solid-state imaging device, a solid-state imaging device capable of optimizing the sensitivity of imaging pixels and the AF (autofocus) performance of phase difference detection pixels Device manufacturing method and electronic device. Background technique [0003] In the related art, for solid-state imaging devices, various techniques have been proposed in order to achieve increased sensitivity or prevention of color mixing. [0004] For example, a solid-state imaging device has been...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/341
CPCH01L27/14627H01L27/14621H01L27/14685H01L27/14623H01L27/1462H01L27/14636H01L27/14645H04N25/40
Inventor 关勇一井上俊徳狭山征博中元幸香
Owner SONY GRP CORP
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