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CMOS image sensor device and its formation method

An image sensor and pattern technology, which is applied in radiation control devices, electric solid devices, semiconductor devices, etc., can solve the problems such as the inability of the lens to focus, achieve the effect of optimizing the sensitivity and improving the forming method

Inactive Publication Date: 2011-03-30
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this creates problems with aberrations arising from the plane of the lens
That is, the lens cannot focus

Method used

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  • CMOS image sensor device and its formation method
  • CMOS image sensor device and its formation method
  • CMOS image sensor device and its formation method

Examples

Experimental program
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Embodiment Construction

[0018] example figure 2 is a view showing the structure of a CIS device according to an embodiment of the present invention. A photoresist (hereinafter, PR) is coated over the entire surface of the top of the logic part 301 including a photodiode over the semiconductor substrate. Then, a barrier layer for forming an MLA pattern and a PR pattern are sequentially formed over the entire surface of the PR top. The MLA pattern is formed by performing an etching process to selectively remove the barrier layer deposited over the entire surface. The MLA PR pattern 303a is formed by performing isotropic etching using the PR pattern as a mask and then using the MLA pattern as a mask.

[0019] Next, an MLA having a concave structure may be manufactured by filling the material 309 into the entire surface of the top of the MLA PR pattern 303a and performing a planarization process. Material 309 has a refractive index n 2 Higher than the refractive index of the MLA PR pattern 303a.

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PUM

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Abstract

A method for forming a CMOS image sensor (CIS) in accordance with embodiments includes sequentially forming a first photoresist and a blocking layer over a semiconductor substrate where a logic section including a photodiode may be formed. A micro lens array pattern may be formed by coating a second photoresist over top of the formed blocking layer, patterning the second photoresist, and then etching the blocking layer by using the patterned second photoresist as a mask. The first photoresist may be patterned by performing isotropic etching using the micro lens array pattern as a mask. A micro lens array may be formed by filling a material having a refractivity higher than that of the first PR in the patterned portion of the first photoresist. The sensitivity of the CIS can be optimized by maximizing the fill factor while maintaining the spherical surface of the lens by fabricating a micro lens array using anisotropic etching.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0105937 (filed on October 22, 2007) based on 35 U.S.C 119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a CMOS image sensor (hereinafter, CIS) device and a method of forming the same, and more particularly, to a device and a method of forming the same, which can be implemented by isotropically etching (isotropically etching) logic including a photodiode. The top of the component (logic area, logic section) to improve the sensitivity of the CIS. Background technique [0003] An image sensor is a device that converts one-dimensional or two-dimensional optical information into electrical signals. Image sensors can be classified into two types: image pickup tubes and solid image pickup devices. The camera tube is widely used in related fields of measurement, control, and identification compatible with image processing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14627H01L27/146
Inventor 朴升龙
Owner DONGBU HITEK CO LTD
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