Check patentability & draft patents in minutes with Patsnap Eureka AI!

Photomask, three-dimensional memory and preparation method thereof

A photomask and memory technology, used in optics, instruments, electrical solid-state devices, etc.

Active Publication Date: 2020-09-25
YANGTZE MEMORY TECH CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present application provides a photomask, a three-dimensional memory and a preparation method thereof, which solves the problem of the growth of an epitaxial structure in a channel hole at the edge caused by the loading effect of process equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photomask, three-dimensional memory and preparation method thereof
  • Photomask, three-dimensional memory and preparation method thereof
  • Photomask, three-dimensional memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0029] see figure 1 , figure 1 is a partial structural schematic diagram of a photomask provided in this application. The photomask 10 includes a first region 11, a second region 12 and a third region 13, the first region 11 and the second region 12 are spaced apart and are located on the same side of the third region 13, the The first area 11 is provided with a plurality of first patterns 14, the second area 12 is provided with a plurality of second patterns 15, the second area 12 includ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a photomask, a three-dimensional memory and a preparation method of the three-dimensional memory. The photomask comprises a first region, a second region and a third region, andthe first region and the second region are spaced and located at the same side of the third region. The first region is provided with a plurality of first patterns, the second region is provided witha plurality of second patterns and comprises a first corner part, the first corner part is far away from the first region and is close to the third region, and the second patterns close to the firstcorner part are arranged in an arc shape back to the first corner part. According to the photomask provided by the invention, the problem of growth of an epitaxial structure in a channel hole at the edge caused by a loading effect of a process device is solved.

Description

technical field [0001] The present application relates to the technical field of semiconductor devices, in particular to a photomask, a three-dimensional memory and a preparation method thereof. Background technique [0002] Three-dimensional memory is a storage device in which storage units are three-dimensionally arranged on a substrate. It has the advantages of high integration density, large storage capacity, and low power consumption, so it has been widely used in electronic products. In the process of preparing a three-dimensional memory, the polymer in the channel hole is cleaned after the channel hole is formed on the stacked structure, but due to the loading effect of the process equipment, the polymer in the channel hole at the edge cannot be well is removed, thereby affecting the growth of epitaxial structures in the channel holes located at the edges. Contents of the invention [0003] The present application provides a photomask, a three-dimensional memory an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F1/00H01L27/11519H01L27/11524H01L27/11556H01L27/11565H01L27/1157H01L27/11582
CPCG03F1/00H10B41/10H10B41/35H10B41/27H10B43/35H10B43/10H10B43/27
Inventor 邢彦召艾义明
Owner YANGTZE MEMORY TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com