a kind of ga 2 o 3 Thin film and its preparation method

A ga2o3 thin film technology, applied in the field of Ga2O3 thin film and its preparation, can solve the problems of long response time, less research work, low comprehensive performance of ultraviolet detectors, etc., and achieve the effect of short response time

Active Publication Date: 2021-09-03
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But since the current Ga 2 o 3 The overall performance of the UV detector of the material is still relatively low, especially the response time of the device with higher responsivity is often longer
Practice has shown that a very small amount of impurities can change its performance, but there is little related research work at present, and how to use a suitable doping method to greatly improve the overall performance of the device remains to be studied

Method used

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  • a kind of ga <sub>2</sub> o <sub>3</sub> Thin film and its preparation method
  • a kind of ga <sub>2</sub> o <sub>3</sub> Thin film and its preparation method
  • a kind of ga <sub>2</sub> o <sub>3</sub> Thin film and its preparation method

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preparation example Construction

[0024] This application provides a Ga 2 o 3 The preparation method of the thin film by the chemical vapor deposition method in the metal organic compound on the Ga 2 o 3 The thin film is doped with a trace amount of magnesium, so that the thin film has high ultraviolet responsivity and short response time when applied to ultraviolet detectors. Specifically, the embodiment of the present invention discloses a Ga 2 o 3 The preparation method of thin film, comprises the following steps:

[0025] Using organic gallium compounds as the gallium source and high-purity oxygen as the oxygen source, metal-organic chemical vapor deposition is used to deposit on the surface of the substrate, and Ga is obtained after cooling down. 2 o 3 film;

[0026] in Ga 2 o 3 In the process of film growth, the organomagnesium compound is supplemented intermittently, and the time for supplementing the organomagnesium compound begins at Ga 2 o 3 0.1-6h after the film starts to grow, it ends at...

Embodiment 1

[0039] Put the cleaned sapphire substrate into the MOCVD growth chamber, turn on the molecular pump, and make the vacuum degree of the backside of the chamber reach within 100Pa; raise the substrate temperature to 1100°C, and after pretreatment for 0.5h, lower the temperature to growth The temperature is 800°C; nitrogen gas is introduced to make the vacuum degree of the chamber during the growth process 2×10 3 Pa;

[0040] Trimethylgallium was used as the gallium source, the carrier gas flow rate of the gallium source was 25 sccm, and the flow rate of oxygen was 250 sccm; during the growth process, dimethylmagnesocene was used as the magnesium source, and the magnesium source was turned on after 0.2 hours of growth, and the magnesium The carrier gas flow rate of the source is 4sccm, open the magnesium source for 30s, close for 120s, repeat twenty times, then stop adding the magnesium source;

[0041] The entire growth process lasted 2 hours (including the time of turning on t...

Embodiment 2

[0053] In order to verify the influence of the starting time of the magnesium source on the properties of the film, other conditions were the same as in Example 1 except that the starting time of the magnesium source was changed. The start-up times of samples numbered 2-1, 2-2, 2-3, and 2-4 are respectively 0.1h, 0.5h, 0.8h, and 1h (in Example 1, the magnesium source is turned on after starting growth for 0.2h);

[0054] After testing, it was found that the 4 groups of samples were Ga 2 o 3 The light absorption cut-off edge of the thin film is around 250nm. Except for a small amount of magnesium element detected in the EDS data of samples 2-4, no magnesium element was detected in other samples.

[0055] After the four groups of samples were prepared as ultraviolet detectors, except for sample 2-1, which had no obvious effect on the response time of the device, the response time of the device for other samples was significantly shortened.

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Abstract

The present invention provides a Ga 2 o 3 The preparation method of the thin film comprises the following steps: using an organic gallium compound as a source of gallium, using high-purity oxygen as an oxygen source, depositing on the surface of a substrate by metal-organic chemical vapor deposition, and obtaining Ga 2 o 3 thin film; in Ga 2 o 3 The organomagnesium compound was supplemented intermittently during the growth of the film. The application also provides the Ga prepared by the above preparation method 2 o 3 thin film, Ga 2 o 3 The film is doped with trace amounts of magnesium. This application is prepared by preparing Ga 2 o 3 The timing and time control of the access time of organomagnesium compounds in the thin film realizes the Ga 2 o 3 The preparation of thin films provides a convenient and effective means for realizing high-performance solar-blind ultraviolet light detectors.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a Ga 2 o 3 Thin films and methods for their preparation. Background technique [0002] Ultraviolet detection technology is another new military-civilian dual-use detection technology developed after laser and infrared detection technology. It is currently playing a huge role in many fields such as missile tail flame detection, space detection, flame detection and space communication. Especially for detectors working in the sun-blind band (200-280nm), the sensitivity is greatly improved due to the absence of solar ultraviolet interference. In recent years, wide-bandgap semiconductor ultraviolet detectors are considered to be the third-generation ultraviolet detectors that can replace vacuum photomultiplier tubes and Si photomultiplier tubes because of their small size, light weight, no need for filters, and no refrigeration. device. [0003] Ga 2 o 3 As a new type of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L31/032C23C16/40
CPCC23C16/40H01L21/0242H01L21/02565H01L21/0257H01L21/0262H01L31/0321
Inventor 陈星刘可为申德振李炳辉张振中
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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