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A Memristor Based on Composite Nanowire Network Structure

A network structure and nanowire technology, applied in the field of memristors, can solve the problems of restricting memristors, high surface or internal migration barriers of nanowires, complex preparation methods, etc., to reduce power consumption, improve device stability, The effect of low production costs

Active Publication Date: 2022-03-15
BEIHANG UNIV
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  • Abstract
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Problems solved by technology

However, for the memristor of one-dimensional nanowire materials, the further development in the field of memristor is limited due to the long migration path of ions, the high migration barrier on the surface or inside of the nanowire, and the complicated preparation method.

Method used

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  • A Memristor Based on Composite Nanowire Network Structure
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  • A Memristor Based on Composite Nanowire Network Structure

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Embodiment Construction

[0043] The present invention combines the attached Figure 1-7 In further detail, the embodiments are intended to facilitate the understanding of the present invention, and the specific structural details and functional details thereof are only for the purpose of describing the exemplary embodiments and do not have any limiting effect on them. Accordingly, the invention can be embodied in many possible forms and the invention should not be construed as limited to re-presented example embodiments only, but should cover all changes, equivalents and alternatives falling within the scope of the invention.

[0044] In this embodiment, based on the "top electrode / composite nanowire network structure layer / bottom electrode" structure, such as figure 1 As shown, the structure has a top electrode layer 201, a composite nanowire network structure layer 101, and a bottom electrode layer 202 from top to bottom, wherein the composite nanowire network structure layer 101 is composed of a pl...

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Abstract

The present invention proposes a memristor based on a composite nanowire network structure, whose structure includes a bottom electrode layer, a composite nanowire network structure layer, and a top electrode layer from bottom to top; it is characterized in that: the function of the composite nanowire network structure layer It is used as a resistive switching functional layer, including oxygen-doped nitride nanowires and nanowire cladding layers. The bottom end of the oxygen-doped nitride nanowires is connected to one side of the bottom electrode layer; the nanowire cladding layer connects the top of the nanowires and the sides are completely covered, and the nanowire cladding layer is connected with the top electrode layer. The advantages are as follows: the structural device exhibits stable memristive characteristics and learning and forgetting characteristics, which provides a research path for memristors to explore the memristive mechanism and optimize device performance. And has high structural stability, excellent electrical properties. The preparation method is simple, the cost is low, and the performance is excellent. It is widely used in high-density storage computing, artificial synapse simulation, artificial intelligence and other fields, and is conducive to exploring the working mechanism of new brain-like nerves.

Description

technical field [0001] The invention relates to a memristor based on a composite nanowire network structure, and the device has stable, low energy consumption, learning and forgetting memristor characteristics, and belongs to the technical field of brain-like computing devices. Background technique [0002] With the continuous improvement of people's requirements for computing performance, a new type of electronic device with brain-like learning and memory functions has become a research hotspot. The emergence of artificial intelligence has brought great innovations to the development of emerging technologies. Artificial intelligence is a discipline that studies the use of computers to simulate certain human thinking processes and intelligent behaviors (such as learning, reasoning, thinking, planning, etc.). Among them, the neural network based on memristor is an important way to realize artificial intelligence. Due to its advantages of non-volatility, simple structure, lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00B82Y10/00
CPCB82Y10/00H10N70/8822H10N70/826H10N70/026
Inventor 黄安平姬宇航高勤陈学良耿雪丽
Owner BEIHANG UNIV
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