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Memristor based on composite nanowire network structure

A network structure and nanowire technology, applied in the field of memristors, can solve the problems of limiting memristors, complex preparation methods, and high migration barriers on the surface or inside of nanowires, reducing power consumption, improving stability, and improving devices. The effect of stability

Active Publication Date: 2020-10-09
BEIHANG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, for the memristor of one-dimensional nanowire materials, the further development in the field of memristor is limited due to the long migration path of ions, the high migration barrier on the surface or inside of the nanowire, and the complicated preparation method.

Method used

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  • Memristor based on composite nanowire network structure
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  • Memristor based on composite nanowire network structure

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Embodiment Construction

[0043] The present invention combines the attached Figure 1-7 In further detail, the embodiments are intended to facilitate the understanding of the present invention, and the specific structural details and functional details thereof are only for the purpose of describing the exemplary embodiments and do not have any limiting effect on them. Accordingly, the invention can be embodied in many possible forms and the invention should not be construed as limited to re-presented example embodiments only, but should cover all changes, equivalents and alternatives falling within the scope of the invention.

[0044] In this embodiment, based on the "top electrode / composite nanowire network structure layer / bottom electrode" structure, such as figure 1 As shown, the structure has a top electrode layer 201, a composite nanowire network structure layer 101, and a bottom electrode layer 202 from top to bottom, wherein the composite nanowire network structure layer 101 is composed of a pl...

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Abstract

The invention provides a memristor based on a composite nanowire network structure. The structure of the memristor sequentially comprises a bottom electrode layer, a composite nanowire network structure layer and a top electrode layer from bottom to top, the composite nanowire network structure layer serves as a resistive random function layer and comprises oxygen-doped nitride nanowires and a nanowire coating layer, and the bottom ends of the oxygen-doped nitride nanowires are connected with one side of the bottom electrode layer; and the nanowire coating layer completely coats the top end and the side surface of the nanowire and is connected with the top electrode layer. The memristor has the advantages that the memristor of the structure shows stable memristor characteristics and learning and forgetting characteristics, and a research path is provided for exploration of the memristor in a memristor mechanism and optimization of device performance. The structure stability is high, and the electrical property is excellent. The preparation method is simple, low in cost and excellent in performance, can be widely applied to the fields of high-density storage calculation, artificialsynaptic simulation, artificial intelligence and the like, and is beneficial to exploring a novel cranial nerve-like working mechanism.

Description

technical field [0001] The invention relates to a memristor based on a composite nanowire network structure, and the device has stable, low energy consumption, learning and forgetting memristor characteristics, and belongs to the technical field of brain-like computing devices. Background technique [0002] With the continuous improvement of people's requirements for computing performance, a new type of electronic device with brain-like learning and memory functions has become a research hotspot. The emergence of artificial intelligence has brought great innovations to the development of emerging technologies. Artificial intelligence is a discipline that studies the use of computers to simulate certain human thinking processes and intelligent behaviors (such as learning, reasoning, thinking, planning, etc.). Among them, the neural network based on memristor is an important way to realize artificial intelligence. Due to its advantages of non-volatility, simple structure, lo...

Claims

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Application Information

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IPC IPC(8): H01L45/00B82Y10/00
CPCB82Y10/00H10N70/8822H10N70/826H10N70/026
Inventor 黄安平姬宇航高勤陈学良耿雪丽
Owner BEIHANG UNIV
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