X-ray array sensor, detector and method of making the same

Abstract

An X-ray array sensor, a detector and a manufacturing method thereof. The X-ray array sensor includes: a semiconductor substrate; a first doped region array at the lower surface of the semiconductor substrate and a second doped region array at the upper surface with opposite doped ion types, the second doped region array including spacers at least two second doped regions arranged; an isolation cover structure alternately arranged with the second doped regions, the structure intersects with the connecting line of two adjacent second doped regions, and each second doped region The upper surface of the second opening is defined by the isolation cover structures on both sides; and the pin contact electrode located in the second opening. It can reduce the lateral expansion of the depletion electric field and weaken the surface inversion leakage, thereby greatly improving the depletion voltage and Working voltage, the response speed of the signal can be increased by increasing the working voltage.

Description

technical field [0001] The present disclosure belongs to the technical field of X-ray detection, and relates to an X-ray array sensor, a detector and a manufacturing method thereof. Background technique [0002] At present, there are many ways of sensing and detecting X-rays, including: detectors using film photosensitive imaging, X-ray detectors using gas ionizing radiation, solid-state detectors or semiconductor detectors. [0003] Semiconductor detectors have become a potential choice for future market applications due to their small size, high speed, ease of information processing, and flexible design. [0004] The current types of semiconductor detectors include: Computed Radiography (CR, Computed Radiography) detectors, Charge Coupled Device / Complementary Metal Oxide Semiconductor (CCD / CMOS) detectors, Amorphous Silicon Flat Panel Detectors (A-SiFPD) and Epitaxy Silicon detectors, etc. The CR detector performs image exposure on the Imaging Plate based on X-rays, and ...

AI Technical Summary

Problems solved by technology

The CR detector exposes the imaging plate (Imaging Plate) based on X-rays, and uses laser scanning to read the information. Compared with analog film, the efficiency is improved and the work is simplified, but it has the disadvantages of low speed, waiting and low spatial resolution.

CCD / CMOS detectors are based on scintillator light emission, CCD / CMOS detectors record changes, and there are lens / fiber connections in the structure, which has the advantages of small pixel size, high resolution, mature and reliable, but also has the advantages of high cost and complex system structure And the transmission signal has the disadvantage of loss

Amorphous silicon flat panel detectors are based on the following path: X-ray→visible light→photodiode→signal readout, this detector has the advantages of high detection efficiency, high speed of radiation dose reduction and large area, but has low resolution and edge Disadvantage of Charge Affecting Sharpness

Epitaxial silicon detectors read out and process X-ray → charge carriers → high voltage electric field → CMOS signals. The above method has high spatial resolution, fast response and time resolution capability, but the current epitaxial silicon detectors still need further research. improve its performance

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