X-ray array sensor, detector and manufacturing method thereof

Abstract

The invention discloses an X-ray array sensor, a detector and a manufacturing method thereof. The X-ray array sensor includes a semiconductor substrate, a first doped region located on the lower surface of the semiconductor substrate, a second doped region array located on the upper surface of the semiconductor substrate, isolation covering structures, and a pin contact electrode located in a second opening, wherein the first doped region and the second doped region array have opposite doped ion types, the second doped region array comprises at least two second doped regions which are arrangedat intervals, the isolation covering structures and the second doped regions are alternately arranged, the structures are intersected with a connecting line of two adjacent second doped regions, andthe second opening is defined by the isolation covering structures on the two sides of the upper surface of each second doped region. The lateral expansion of a depletion electric field can be reduced, and the surface inversion electric leakage is weakened, so that the depletion voltage and the working voltage of a pixel unit formed by the second doped regions, the semiconductor substrate, the first doped region and the pin contact electrode in the sensor are greatly improved, and the response speed of a signal can be increased by increasing the working voltage.

Description

technical field [0001] The disclosure belongs to the technical field of X-ray detection, and relates to an X-ray array sensor, a detector and a manufacturing method thereof. Background technique [0002] At present, there are many methods for sensing and detecting X-rays, including: detectors using film photosensitive imaging, X-ray detectors using gas ionizing radiation, solid-state detectors or semiconductor detectors. [0003] Due to the advantages of small size, fast speed, convenient information processing, and flexible design, semiconductor detectors have become a potential choice for future market applications. [0004] The current types of semiconductor detectors include: computer X-ray (CR, Computed Radiography) detectors, charge-coupled device / complementary metal oxide semiconductor (CCD / CMOS) detectors, amorphous silicon flat panel detectors (A-SiFPD) and epitaxy Silicon detectors, etc. The CR detector exposes the imaging plate (Imaging Plate) based on X-rays, a...

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Problems solved by technology

The CR detector exposes the imaging plate (Imaging Plate) based on X-rays, and uses laser scanning to read the information. Compared with analog film, the efficiency is improved and the work is simplified, but it has the disadvantages of low speed, waiting and low spatial resolution.

CCD / CMOS detectors are based on scintillator light emission, CCD / CMOS detectors record changes, and there are lens / fiber connections in the structure, which has the advantages of small pixel size, high resolution, mature and reliable, but also has the advantages of high cost and complex system structure And the transmission signal has the disadvantage of loss

Amorphous silicon flat panel detectors are based on the following path: X-ray→visible light→photodiode→signal readout, this detector has the advantages of high detection efficiency, high speed of radiation dose reduction and large area, but has low resolution and edge Disadvantage of Charge Affecting Sharpness

Epitaxial silicon detectors read out and process X-ray → charge carriers → high voltage electric field → CMOS signals. The above method has high spatial resolution, fast response and time resolution capability, but the current epitaxial silicon detectors still need further research. improve its performance

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