High-resistance gallium nitride-based buffer layer with nano-step gradient layer and preparation method

Abstract

The invention provides a high-resistance gallium nitride-based buffer layer with a nano-step graded layer, including a substrate stacked from bottom to top, a nucleation layer, and a high-resistance Al layer with nano-steps x Ga 1‑x N buffer layer: the high-resistance Al with nano-steps x Ga 1‑x The N buffer layer contains multiple Al x Ga 1‑x N nanostep groups, each of the Al x Ga 1‑x The content of Al in the steps of the N nanostep group gradually changes from the bottom layer to the top layer, and the two adjacent Al x Ga 1‑x The difference range of the Al composition in the N nanosteps is 2%-50%. The present invention also provides a preparation method of the above-mentioned high-resistance gallium nitride-based buffer layer with a nano-step gradient layer.

Description

technical field [0001] The invention relates to an electronic component, in particular to a field effect transistor. Background technique [0002] Growing a high-quality semi-insulating GaN-based buffer layer has always been one of the key technologies for the epitaxial growth of GaN-based high electron mobility field effect transistor (High Electron Mobility Transistor, HEMT) devices. When the HEMT device is working, the leakage of the GaN-based buffer layer will not only deteriorate the pinch-off performance of the device, but also weaken the control ability of the gate to the channel current, thereby deteriorating the overall performance of the device; at the same time, the leakage in the buffer layer will also Make the device heat, make the output characteristics of the device worse so as to affect the reliability and service life of the device. The leakage problem of the GaN-based buffer layer has always been a problem that plagues the performance improvement of HEMT d...

AI Technical Summary

Problems solved by technology

The first method is to obtain a high-resistance GaN epitaxial layer by introducing defect impurities, so the quality of the epitaxial layer will deteriorate. At the same time, the method of obtaining high-resistance GaN by controlling growth conditions is highly dependent on equipment and poor in repeatability; The second method to introduce metal impurities generally has a strong memory effect and will contaminate the reaction chamber, making subsequent epitaxial materials have the risk of being contaminated by metal impurities. Therefore, a dedicated MOCVD is usually required to grow high-resistance GaN-based epitaxial materials, and the introduction of impurities will cause contamination. Decreasing the mobility of channel 2DEG affects device characteristics

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