A kind of semiconductor laser structure and preparation method thereof
A laser and semiconductor technology, which is applied to the structure of optical waveguide semiconductors and the structure of active regions, can solve problems such as reducing thermal stress, and achieve the effects of reducing cracks, uniform and stable longitudinal current flow, and firm bonding
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Embodiment 1
[0048] A semiconductor laser structure, comprising an N-metal layer 7, an N-current blocking layer 6, a substrate 1, an epitaxial material layer 2, a P-current blocking layer 3, and a P-metal layer 4 arranged sequentially from bottom to top;
[0049] The epitaxial material layer 2 has periodically arranged ridges, grooves on both sides of the ridges, and shoulders outside the grooves; forming a shouldered ridge structure;
[0050] A P-current blocking layer 3 is provided on the surface of the ridges, grooves and shoulders, and the P-current blocking layer 3 is SiO 2 , with a thickness of The P-current blocking layer 3 is provided with a window at the position of the ridge, and the width of the window is smaller than the width of the ridge;
[0051]The lower surface of the substrate 1 corresponding to the shoulder of the P surface has periodically arranged elliptical holes 5; the ratio of the total area of the holes to the area of the shoulder area corresponding to the P ...
Embodiment 2
[0056] A kind of semiconductor laser structure as described in embodiment 1, difference is:
[0057] There are 50 circular holes 5 in the substrate in each cycle, the diameter of the holes is 3 μm, and the depth is 5 μm; the ratio of the total area of the circular holes to the area of the shoulder area corresponding to the P surface on the lower surface of the substrate is 0.5:1.
[0058] The P-current blocking layer 3 is SiN x , with a thickness of The N-current blocking layer 6 is SiN x , with a thickness of
[0059] The material system of the P-metal layer 4 is TiCu, and the thickness is
[0060] The N-metal layer material system is GeCu, with a thickness of
Embodiment 3
[0062] The preparation method of the semiconductor laser structure as described in embodiment 1, 2, comprises:
[0063] (1) using MOCVD to grow an epitaxial material layer on a substrate; the substrate is a GaAs substrate;
[0064] (2) Fabricate periodically arranged shoulder ridge structures on the epitaxial wafer through photolithography and etching;
[0065] (3) Growth of SiO by PECVD 2 or SiN x Make a P-current blocking layer 3, and make a window at the position of the ridge by photolithography;
[0066] (4) Evaporate P-metal layer 4 to complete the P surface electrode preparation; as figure 1 shown.
[0067] (5) Thinning the chip substrate by a mechanical method; the thickness of the substrate after the thinning is 100-150 μm;
[0068] (6) Make periodically arranged elliptical or circular holes 5 on the lower surface of the substrate by photolithography and ICP etching;
[0069] (7) Using PECVD to grow SiO on the substrate 2 or SiN x Make the N-current blocking la...
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Abstract
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