High-resistance gallium nitride-based buffer layer having nano-step gradient layer and preparation method

Abstract

The present invention provides a high-resistance gallium nitride-based buffer layer having a nano-step gradient layer. The high-resistance gallium nitride-based buffer layer comprises a substrate, a nucleation layer, and a high-resistance AlxGa1-xN buffer layer having nano-steps which are stacked from bottom to top. The high-resistance AlxGa1-xN buffer layer having nano-steps comprises a pluralityof AlxGa1-xN nano-step groups. The Al contents in the steps of each AlxGa1-xN nano-step group are successively changed from the lowest layer to the uppermost layer. The difference of the Al contentsof two adjacent AlxGa1-xN nano-steps ranges from 2% to 50%. The invention also provides a method for preparing the high-resistance gallium nitride-based buffer layer having a nano-step gradient layer.

Description

Technical field [0001] The invention relates to an electronic component, in particular to a field effect transistor. Background technique [0002] Growing high-quality semi-insulating GaN-based buffer layers has always been one of the key technologies for epitaxial growth of GaN-based High Electron Mobility Transistor (HEMT) devices. When the HEMT device is working, the leakage of the GaN-based buffer layer will not only deteriorate the pinch-off performance of the device, but also weaken the gate's ability to control the channel current, thereby deteriorating the overall performance of the device; at the same time, the leakage in the buffer layer will also The device heats up and the output characteristics of the device deteriorate to affect the reliability and service life of the device. The leakage problem of the GaN-based buffer layer has always been a problem in improving the performance of HEMT devices. Therefore, in order to obtain good device characteristics and improve ...

AI Technical Summary

Problems solved by technology

The first method is to obtain a high-resistance GaN epitaxial layer by introducing defect impurities, so the quality of the epitaxial layer will deteriorate. At the same time, the method of obtaining high-resistance GaN by controlling growth conditions is highly dependent on equipment and poor in repeatability; The second method to introduce metal impurities generally has a strong memory effect and will contaminate the reaction chamber, making subsequent epitaxial materials have the risk of being contaminated by metal impurities. Therefore, a dedicated MOCVD is usually required to grow high-resistance GaN-based epitaxial materials, and the introduction of impurities will cause contamination. Decreasing the mobility of channel 2DEG affects device characteristics

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