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Film structure

A film structure and crystal structure technology, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, electrical components, circuits, etc., can solve the problems of piezoelectric film piezoelectric characteristics improvement and difficulties

Pending Publication Date: 2020-10-20
YOUTEC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above-mentioned PZT-containing piezoelectric film formed on the substrate, it is difficult to improve the piezoelectric characteristics of the piezoelectric film due to the reason, for example, that the piezoelectric film has tensile stress.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0069] First, the membrane structure of Embodiment 1 which is one embodiment of the present invention will be described. figure 1 It is a sectional view of the membrane structure of Embodiment 1.

[0070] Such as figure 1 As shown, the film structure 10 according to Embodiment 1 has a base 11 and a piezoelectric film portion 12 formed on the upper surface 11 a which is the main surface of the base 11. The piezoelectric film portion 12 has a lower piezoelectric film 21 and a piezoelectric film portion 12 formed on The upper piezoelectric film 22 on the lower piezoelectric film 21 . The lower piezoelectric film 21 contains lead zirconate titanate. The upper piezoelectric film 22 contains lead zirconate titanate. The base 11 has a compressive stress applied in a direction parallel to the upper surface 11a of the base 11, that is, a compressive stress applied along the upper surface 11a (described later). figure 2 Indicated compressive stress CS1). Both the lower piezoelectr...

Embodiment approach 2

[0116] Next, the film structure of Embodiment 2 will be described. The film structure of Embodiment 2 differs from the film structure of Embodiment 1 in which soft PZT is laminated on soft PZT.

[0117] Figure 4 It is a sectional view of the membrane structure of Embodiment 2. Such as Figure 4 As shown, the film structure 10 according to Embodiment 2 has a base 11 and a piezoelectric film portion 12 formed on an upper surface 11 a serving as a principal surface of the base 11 . The piezoelectric film portion 12 has a lower piezoelectric film 23 and a piezoelectric film portion 12 formed on The upper piezoelectric film 24 on the lower piezoelectric film 23 . The lower piezoelectric film 23 contains lead zirconate titanate. The upper piezoelectric film 24 contains lead zirconate titanate. The base 11 has a compressive stress applied in a direction parallel to the upper surface 11a of the base 11, that is, a compressive stress applied along the upper surface 11a (described...

Embodiment 1

[0158] As the film structure of Embodiment 1, the following film structure was produced: the thickness of the lower piezoelectric film 21 was 250 nm, and the thickness of the upper piezoelectric film 22 was 750 nm, equivalent to image 3 The film structure when the medium ratio RT1 is 0.25 is a film structure composed of a laminate of hard PZT and soft PZT on the hard PZT as a whole of the piezoelectric film portion 12 .

[0159] Hereinafter, a method for forming the film structure of Example 1 will be described. First, prepare the SOI substrate 16 (see figure 1 ). SOI substrate 16 contains: silicon substrate 17 (refer to figure 1 ); the BOX layer 18 formed on the silicon substrate 17; the substrate 11 formed of the SOI layer 19 formed on the BOX layer 18, and the substrate 11 has an upper surface as a main surface constituted by a (100) plane.

[0160] Next, on the substrate 11, as an alignment film 13 (refer to figure 1 ), formed zirconia (ZrO 2 )membrane. The conditio...

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Abstract

Provided is a film structure capable of improving piezoelectric characteristics of a piezoelectric film containing lead zirconate titanate. The file structure (structure) is provided with: a base (11); a lower piezoelectric film (21) that is formed on the base (11) and contains lead zirconate titanate; and an upper piezoelectric film (22) that is formed on the lower piezoelectric film (21) and contains lead zirconate titanate. The base (11) has compressive stress, both the lower piezoelectric film (21) and the upper piezoelectric film (22) have tensile stress, and the elastic constant of the lower piezoelectric film (21) is greater than the elastic constant of the upper piezoelectric film (22).

Description

technical field [0001] The present invention relates to membrane structures. Background technique [0002] As a film structure having a substrate, a conductive film formed on the substrate, and a piezoelectric film formed on the conductive film, a film structure having a substrate, a platinum-containing conductive film formed on the substrate, and a piezoelectric film formed on the conductive film is known. Lead zirconate titanate (Pb(Zr,Ti)O 3 : PZT) piezoelectric film film structure. [0003] In addition, as a piezoelectric film containing PZT, for example, a piezoelectric film having a structure in which on a first film containing PZT having a zirconium-rich composition having a relatively large composition ratio of zirconium (Zr) to titanium (Ti), A second film including PZT having a titanium-rich composition having a relatively small composition ratio of zirconium (Zr) to titanium (Ti) is formed. [0004] In International Publication No. 2017 / 221649 (Patent Document ...

Claims

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Application Information

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IPC IPC(8): H01L41/083H01L41/187
CPCH10N30/50H10N30/8554
Inventor 木岛健小西晃雄
Owner YOUTEC CO LTD
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