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A kind of preparation method of high-purity cadmium telluride

A cadmium telluride and quartz tube technology, applied in the field of thin-film solar energy materials, can solve the problems of limited raw material purity, difficulty in producing and preparing cadmium telluride products, etc., and achieve the effect of preventing the occurrence of tube explosions

Active Publication Date: 2022-01-18
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent No. CN 102086031A discloses a liquid-phase synthesis method of cadmium telluride. The method is to mix tellurium and cadmium evenly in a molar ratio of 1:1 and synthesize them in a sealed quartz tube in a high-temperature liquid phase; patent No. CN103373715 A discloses A method for synthesizing cadmium telluride using a vertical gradient solidification furnace at high temperature; similar methods are limited by the purity of raw materials, and it is difficult to directly produce high-purity cadmium telluride products of 6N or higher. Cadmium is mixed according to the proportion. During the production process, it is easy to cause a sudden huge vapor pressure in the sealed quartz tube due to abnormal temperature control, which may cause the risk of tube explosion.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of raw materials: place the graphite boat containing 500g of 5N tellurium block in the quartz tube of the grinding head, place the quartz tube in a horizontal heating furnace, pass 5N nitrogen gas for 30min to empty the quartz tube, and then raise the temperature of the heating furnace to 500°C. Turn off the heater after 60 minutes of heat preservation, so that the high-purity tellurium block is melted and cooled into an ingot shape matching the graphite boat;

[0028] (2) The surface of the cooled tellurium ingot is polished with a clean sponge brush, cleaned with alcohol and high-pressure gas to remove surface oxides, and then placed in a graphite boat. The weight is 497g; the molar ratio is 1.15:1. Weigh 5% Dilute hydrochloric acid treatment and vacuum-dried cadmium particles 308.7g are spread on the tellurium ingot;

[0029] (3) The graphite boat filled with materials is placed in a quartz tube, and the quartz tube is evacuated to 5.0×10 through a va...

Embodiment 2

[0034] (1) Preparation of raw materials: place a graphite boat containing 1000g of 5.5N tellurium block in the quartz tube of the grinding head, place the quartz tube in a horizontal heating furnace, vent the quartz tube with 5N nitrogen for 40 minutes, and then raise the temperature of the heating furnace to 550°C , after 45 minutes of heat preservation, turn off the heating to melt the high-purity tellurium block and cool it into an ingot that matches the graphite boat;

[0035] (2) The surface of the cooled tellurium ingot is polished with a clean sponge brush and cleaned with alcohol and high-pressure gas to remove surface oxides, then placed in a graphite boat, and the weight is 995g; 796.8g of cadmium particles treated with dilute hydrochloric acid and vacuum-dried are spread on the tellurium ingot;

[0036] (3) The graphite boat filled with materials is placed in a quartz tube, and the quartz tube is evacuated to 4.5×10 through a vacuum system. -3 After Pa, melt the qu...

Embodiment 3

[0041] (1) Preparation of raw materials: place the graphite boat with 1500g of 5N tellurium block in the quartz tube of the grinding head, place the quartz tube in a horizontal heating furnace, pass through 5N argon gas for 45 minutes to empty the quartz tube, and then raise the temperature of the heating furnace to 600°C. After 30 minutes of heat preservation, turn off the heating to melt the high-purity tellurium block and cool it into an ingot that matches the graphite boat;

[0042] (2) The surface of the cooled tellurium ingot is polished with a clean sponge brush, cleaned with alcohol and high-pressure gas to remove surface oxides, and then placed in a graphite boat. The weight is 1492.3g; 1251.9g of cadmium particles treated with dilute nitric acid and dried in vacuum are spread on the tellurium ingot;

[0043] (3) The graphite boat filled with materials is placed in a quartz tube, and the quartz tube is evacuated to 6.5×10 through a vacuum system. -3 After Pa, melt th...

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PUM

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Abstract

The invention provides a method for preparing cadmium telluride, which comprises the following steps: mixing tellurium and cadmium in a prescribed molar ratio, wherein the tellurium is in excess relative to the cadmium; loading the mixed tellurium and cadmium into a crucible boat; Put the crucible boat into the quartz tube, vacuumize, and seal the quartz tube; put the sealed quartz tube into the horizontal directional solidification furnace, and use multi-stage heating method to heat and keep warm, so that tellurium and cadmium react; after the reaction is completed, the crucible The boat, the quartz tube and the materials in the tube were cooled to normal temperature, the quartz tube was cut open, and the cadmium telluride obtained by the synthesis reaction was taken out, and the obtained cadmium telluride had a purity of 6N. In the preparation method of cadmium telluride provided by the present invention, metal cadmium and tellurium are firstly treated separately to ensure that no large vapor pressure will be generated during the production process, and effectively prevent the possibility of tube explosion during the production process. At the same time, the horizontal synthesis and horizontal directional solidification are combined to form a one-step method for preparing 6N and above high-purity cadmium telluride.

Description

technical field [0001] The invention belongs to the field of thin-film solar energy materials, and relates to a horizontal one-step preparation method of a high-purity cadmium telluride material. Background technique [0002] CdTe is a II-VI compound semiconductor material with zinc blende structure and has a high light absorption coefficient. CdTe with a thickness of 1 μm can absorb more than 99% of the radiation energy in sunlight that is greater than the bandgap width, and is very suitable for making thin-film solar cells. Compared with other compound thin-film solar cells, CdTe thin-film solar cells have the following characteristics: (1) The band gap of CdTe (about 1.45eV) matches the solar spectrum, which is 100 times higher than that of silicon and other materials, and is suitable for the preparation of high-efficiency thin films. The theoretical conversion rate of solar cells is 28%; (2) Compared with silicon materials, CdTe has the characteristics of low power tempe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/48C30B28/06
CPCC30B29/48C30B28/06
Inventor 胡智向朱刘文崇斌范文涛
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD