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Application of high-priced metals in glsi multilayer wiring in cmp

A multi-layer wiring and high-priced technology, applied in the field of microelectronics, can solve problems such as user loss, achieve the effect of safe use, improve cost performance, and simplify the process

Active Publication Date: 2021-09-28
HEBEI UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At the same time, the existing polishing liquid is easy to form bacterial film during transportation and storage. Since the active ingredients of the polishing liquid that generate bacterial film have changed, it can only be discarded, causing losses to users.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The wiring metal is copper, and the wiring high-valent metal compound is copper citrate.

[0028] Abrasives, copper citrate, FA / O active agent, JFC, and silicone resin were sequentially added to deionized water and mixed thoroughly to prepare 1000 g of alkaline polishing liquid. Among them: silica sol with a particle size of 15nm is used as the abrasive, and the dosage is 0.1wt%; copper citrate is 0.5g / L; FA / O active agent is 0.1me / L; JFC is 0.1me / L; silicone resin is 1wt‰ , make up to 1000g with deionized water.

[0029] Immediate polishing: use the French E460 polishing machine, use the above polishing solution to polish the copper film for 3 minutes under the conditions of working pressure of 1Psi, rotating speed of 90 rpm, temperature of 23°C, and flow rate of 3O0me / min, with a rate of 2512A / min . After testing, all indicators after polishing meet the requirements for use in the field of microelectronics.

[0030] The above polishing solution was placed for 183 d...

Embodiment 3

[0037] The wiring metal is copper, and the wiring high-valent metal compound is selected from citric acid chelated copper.

[0038] Abrasives, citric acid chelated copper, FA / O active agent, JFC, and silicone resin were sequentially added to deionized water and mixed thoroughly to prepare 1000 g of alkaline polishing liquid.

[0039] Among them, the abrasive material adopts silica sol with a particle size of 80-100nm, and the concentration is 10wt%; citric acid chelated copper 30g / L, FA / O active agent 30me / L, defoamer GPE 5wt‰, deionized water make up 1000g .

[0040] Immediately after preparation, polishing: Polishing rate is 2861A / min for 3 minutes on a French E46O polishing machine at a working pressure of 3Psi, a speed of 140 rpm, a temperature of 23°C, and a flow rate of 3O0me / min. After 180 days, the copper film was planarized by CMP under the same conditions, and the rate was 2965A / min, which was very stable. After testing, all indicators after polishing meet the requ...

Embodiment 4

[0042] The wiring metal is copper, and the wiring high-valent metal compound is copper glycine.

[0043] Add 2g / L copper glycinate to the prepared barrier layer polishing solution, and throw the barrier layer pattern sheet speed V under standard conditions 介质 750A / min, V cu It is 520A / min. After 180 days of storage, the barrier pattern sheet is polished under the same standard conditions, V 介质 760A / min, V cu 514A / min, good stability. The selection ratio is 1.66, and the planarization degree is less than 3%, which satisfies the production requirements in the field of microelectronics well.

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Abstract

The invention discloses the application of a GLSI multilayer wiring high-valent metal in CMP, and provides a new technology for improving stability of chemical mechanical polishing planarization. The compound of the multilayer wiring high-valent metal substitutes for the oxidizing agent. The polishing liquid used in CMP contains the wiring high-valent metal compound of the same kind as the wiring metal. The polishing solution adopting the technical solution of the invention can be stable for more than 6 months and can be used directly. When in use, there is no need for configuration of special equipment, which simplifies the process and greatly improves the stability of the polishing solution. Moreover, the transportation and storage are safe, no corrosion is caused to the equipment, and the use is safer.

Description

technical field [0001] The invention relates to the technical field of microelectronics, and more specifically relates to the application of a GLSI multilayer wiring high-valent metal in CMP and a CMP polishing solution containing a wiring high-valent metal compound. Background technique [0002] Since the 90s of last century, the integration degree of GLSI has doubled according to Moore's law in 18 months. Each chip of tens of square millimeters can integrate nearly tens of billions of devices. Only after interconnection can the design function be connected. The total length of the line is as long as several circles of the earth's equator. Since a single-layer connection will cause a short circuit, IBM invented a layered connection method, and an insulating medium is required between the connections. In order to prevent diffusion and connection short circuit during the wiring metal work, a layer of inert metal, that is, a barrier layer, is added between the dielectric and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304C09G1/00C09G1/02
CPCC09G1/00C09G1/02
Inventor 刘玉岭王辰伟罗翀
Owner HEBEI UNIV OF TECH