Unlock instant, AI-driven research and patent intelligence for your innovation.

Gas distributing device and method and atomic layer deposition equipment

A gas distribution and gas technology, which is applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of inability to guarantee equal ozone amount, expensive ozone generator, and high equipment cost

Active Publication Date: 2020-10-27
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current ozone generator can only be connected to one process chamber because:
[0004] First, the price of the ozone generator is expensive, resulting in higher equipment costs;
[0005] Second, when an ozone generator is connected to multiple process chambers, it cannot be guaranteed that the amount of ozone flowing into each process chamber is equal in the same period of time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gas distributing device and method and atomic layer deposition equipment
  • Gas distributing device and method and atomic layer deposition equipment
  • Gas distributing device and method and atomic layer deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0038] see figure 1 , the gas distribution device provided in this embodiment is used to distribute the process gas output by the gas supply device 2 into N process chambers, where N is an integer greater than 1. In this embodiment, taking N=3 as an example, the three process chambers are respectively process chambers 1a, 1b and 1c. There is one gas supply device 2, which is used to supply process gas to the three process chambers 1a, 1b and 1c simultaneously through the gas distribution device.

[0039] Above-mentioned gas supply device 2 for example comprises ozone generator, oxygen input pipeline 21, nitrogen input pipeline 22 and output pipeline 25, and on oxygen input pipeline 21, nitrogen input pipeline 22 and output pipeline 25, be respectively provided with On-off valves 23, 24 and 26. Oxygen input pipeline 21 and nitrogen input pipeline 22 are used for oxygen (O 2 ) and nitrogen (N 2 ) is delivered to the chamber of the ozone generator; the output pipeline 25 is u...

no. 2 example

[0059] see figure 2 , the gas distribution device provided in this embodiment is an extension made on the basis of the above-mentioned first embodiment, that is, N exhaust bypasses and air extraction devices are added to realize the selective distribution of each intake gas The path is connected to the process chamber or the gas extraction device, so that it can be applied to process equipment such as atomic layer deposition equipment that requires multiple process gases to be alternately fed into the process chamber.

[0060] Specifically, the gas distribution device provided in this embodiment also includes N intake air passages, taking N=3 as an example, the three intake air passages are 3a, 3b and 3c respectively, and the three intake air passages 3a, 3b and The inlet ends of 3c are all connected with the output ends of the gas supply device 2, specifically connected with the output ends of the output pipeline 25; Connect to the air inlet of 1c.

[0061] On this basis, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the invention provides a gas distributing device and method and atomic layer deposition equipment. The gas distributing device comprises N gas input ways. Gas input ends of all the gas input ways are connected with an output end of a gas supply device. Gas output ends of all the gas input ways are connected with gas inlets of all technology chambers. Each gas input way is provided with an adjustable throttling unit and a pressure difference detecting unit. The pressure difference detecting units are used for detecting pressure difference located at the two ends of the adjustable throttling units in the gas input ways. The adjustable throttling units are used for adjusting the channel diameter for technology gas to pass through, and thus a gas flow value of the technologygas corresponding to the pressure difference and the channel diameter is equal to one nth of a gas output value of the technology gas output by the gas supply device. According to the embodiment, onegas supply device can supply the technology gas to the N technology chambers, the equipment cost is reduced, and it can be ensured that gas flow flowing into all the technology chambers is the same.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a gas distribution device and method, and atomic layer deposition equipment. Background technique [0002] In the atomic layer deposition (Atomic layer deposition, hereinafter referred to as ALD) oxide process, the oxygen source is ozone, and the ozone can be provided by an ozone generator, which is connected to the ALD process chamber through a pipeline to supply ozone into the process chamber. [0003] At present, under the demand of large production capacity, in the process of process manufacturing, an atomic layer deposition equipment often needs to be equipped with multiple identical process chambers and run the same process to meet the matching of production capacity. However, the current ozone generator can only be connected to one process chamber because: [0004] First, the price of the ozone generator is expensive, resulting in higher equipment costs; ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45544C23C16/52
Inventor 纪红张文强兰云峰秦海丰
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD