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Gas distribution apparatus and method, atomic layer deposition apparatus

A gas distribution and gas technology, which is applied in coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of high equipment cost, expensive ozone generator, and inability to guarantee the uniform amount of ozone, etc., to reduce equipment cost effect

Active Publication Date: 2022-03-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current ozone generator can only be connected to one process chamber because:
[0004] First, the price of the ozone generator is expensive, resulting in higher equipment costs;
[0005] Second, when an ozone generator is connected to multiple process chambers, it cannot be guaranteed that the amount of ozone flowing into each process chamber is equal in the same period of time

Method used

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  • Gas distribution apparatus and method, atomic layer deposition apparatus
  • Gas distribution apparatus and method, atomic layer deposition apparatus
  • Gas distribution apparatus and method, atomic layer deposition apparatus

Examples

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no. 1 example

[0038] see figure 1 , the gas distribution device provided in this embodiment is used to distribute the process gas output by the gas supply device 2 into N process chambers, where N is an integer greater than 1. In this embodiment, taking N=3 as an example, the three process chambers are respectively process chambers 1a, 1b and 1c. There is one gas supply device 2, which is used to supply process gas to the three process chambers 1a, 1b and 1c simultaneously through the gas distribution device.

[0039] Above-mentioned gas supply device 2 for example comprises ozone generator, oxygen input pipeline 21, nitrogen input pipeline 22 and output pipeline 25, and on oxygen input pipeline 21, nitrogen input pipeline 22 and output pipeline 25, be respectively provided with On-off valves 23, 24 and 26. Oxygen input pipeline 21 and nitrogen input pipeline 22 are used for oxygen (O 2 ) and nitrogen (N 2 ) is delivered to the chamber of the ozone generator; the output pipeline 25 is u...

no. 2 example

[0059] see figure 2 , the gas distribution device provided in this embodiment is an extension made on the basis of the above-mentioned first embodiment, that is, N exhaust bypasses and air extraction devices are added to realize the selective distribution of each intake gas The path is connected to the process chamber or the gas extraction device, so that it can be applied to process equipment such as atomic layer deposition equipment that requires multiple process gases to be alternately fed into the process chamber.

[0060] Specifically, the gas distribution device provided in this embodiment also includes N intake air passages, taking N=3 as an example, the three intake air passages are 3a, 3b and 3c respectively, and the three intake air passages 3a, 3b and The inlet ends of 3c are all connected with the output ends of the gas supply device 2, specifically connected with the output ends of the output pipeline 25; Connect to the air inlet of 1c.

[0061] On this basis, ...

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Abstract

Embodiments of the present invention provide a gas distribution device and method, and atomic layer deposition equipment. The gas distribution device includes N gas inlet paths, and the gas inlet ends of each gas inlet path are connected to the output ends of the gas supply device. The gas outlets of each inlet gas path are respectively connected to the inlets of each process chamber; each inlet gas path is equipped with an adjustable flow unit and a differential pressure detection unit, wherein the differential pressure detection unit is used to detect The pressure difference at both ends of the adjustable flow unit in the inlet gas path; the adjustable flow unit is used to adjust the channel diameter for the process gas to pass through, so that the gas flow value of the process gas corresponding to the pressure difference and the channel diameter is equal to the gas supply device One-Nth of the gas output value of the output process gas. The embodiment of the present invention not only realizes the supply of process gas to N process chambers by one gas supply device, which reduces the equipment cost, but also ensures the same flow rate of gas flowing into each process chamber.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a gas distribution device and method, and atomic layer deposition equipment. Background technique [0002] In the atomic layer deposition (Atomic layer deposition, hereinafter referred to as ALD) oxide process, the oxygen source is ozone, and the ozone can be provided by an ozone generator, which is connected to the ALD process chamber through a pipeline to supply ozone into the process chamber. [0003] At present, under the demand of large production capacity, in the process of process manufacturing, an atomic layer deposition equipment often needs to be equipped with multiple identical process chambers and run the same process to meet the matching of production capacity. However, the current ozone generator can only be connected to one process chamber because: [0004] First, the price of the ozone generator is expensive, resulting in higher equipment costs; ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/52
CPCC23C16/45544C23C16/52
Inventor 纪红张文强兰云峰秦海丰
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD