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A soi LIGBT device with integrated Zener diode

A technology that integrates Zener and diodes. It is applied in semiconductor devices, electrical components, circuits, etc. It can solve problems that affect the turn-on characteristics of devices, and achieve the effects of expanding the safe working area, improving short-circuit capability, and reducing Miller capacitance.

Active Publication Date: 2021-05-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the floating P-well region structure at the emitter end can enhance the carrier storage effect of LIGBT, but during the turn-on process, the displacement current caused by the holes accumulated in the floating P-region charges the gate capacitance, which seriously affects the turn-on characteristics of the device.

Method used

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  • A soi LIGBT device with integrated Zener diode
  • A soi LIGBT device with integrated Zener diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] like figure 1 As shown, compared with the traditional device structure, the groove-gate SOI LIGBT with integrated Zener diode in this example has a Zener diode integrated in the P well region 4 near the N-type drift region 3 .

[0019] This example works as follows:

[0020] In the forward conduction, the emitter end blocks the slot gate and the control slot gate acts as a physical barrier, which is beneficial to increase the carrier concentration in the drift region, and at the same time, there are channels on both sides of the control slot gate and the side of the blocking slot gate close to the emitter exists, the channel density of the device can be increased to reduce the resistance of the channel region, and under the combined effect of the device V on can be significantly reduced. As the anode voltage rises, the Zener diode breaks down, so that the potential at the P-well region 4 is clamped, thereby reducing the Miller capacitance; at the same time, the breakd...

Embodiment 2

[0024] like figure 2 Shown, in this example and embodiment 1 figure 1 The difference is that, in this example, a P-type buried layer 15 is introduced into the upper surface of the N-type drift region 3 to be in contact with the side of the P-type well region 4 . The working mechanism of the device in this embodiment differs from that in Embodiment 1 in that: the introduced P-type buried layer 15 and the N-type drift region 3 are mutually depleted to form a structure similar to a super junction (SJ). In the forward blocking state, the P-type buried layer 15 introduced in this example can deplete each other with the depleted N-type drift region 3, thereby optimizing the withstand voltage of the device. At the same time, when the device is turned off, the P-type buried layer 15 and the N-type drift region 3 extract holes and electrons from each other, which can accelerate the depletion of the device, thereby further reducing the turn-off time and the turn-off loss.

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Abstract

The invention belongs to the technical field of power semiconductors, in particular to an SOI LIGBT device integrating Zener diodes. Compared with the traditional LIGBT, the present invention introduces a zener diode into the P-well region of the emitter terminal, and its P-type region is electrically connected to the emitter of the device, and its N-type region and the P-well region are electrically connected through a floating ohmic metal. connected. When the collector voltage continues to increase, the Zener diode will undergo reverse breakdown and conduction, thereby clamping the potential of the P-well region; this not only helps reduce the device gate capacitance, but also reduces the saturation current during conduction to improve the short-circuit capability of the device , A hole extraction path can be provided during turn-off to reduce turn-off time and turn-off loss. Compared with the traditional LIGBT structure, the new LIGBT structure provided by the present invention obtains a better trade-off relationship between turn-on voltage drop and turn-off loss, and improves the short-circuit resistance capability of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductors, and in particular relates to a slot-gate SOIL IGBT with internally integrated Zener diodes. Background technique [0002] SOI-based lateral insulated gate bipolar transistor (Lateral Insulated Gate Bipolar Transistor, LIGBT) is a typical representative of bipolar devices. Due to its high input impedance, low conduction voltage drop, high withstand voltage characteristics, dielectric isolation and other characteristics, it is widely used in various power electronic systems and has become a key semiconductor device in the field of medium and high voltage switch applications. [0003] When the LIGBT device is conducting forward, conductance modulation effect occurs in the drift region and has a small turn-on voltage drop, but at the same time, it needs to extract a large number of carriers stored in the drift region when it is turned off, resulting in a large turn-off of the device. lo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0623H01L29/7394
Inventor 魏杰马臻郗路凡罗小蓉张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA