A Heat Dissipation Structure for Dielectric Integrated Suspension Line Power Amplifier
A technology of medium integration and heat dissipation structure, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of reducing contact thermal resistance, unable to ensure uniform solder filling and tight connection, etc. Good heat dissipation effect, ensure the effect of heat dissipation effect
Active Publication Date: 2022-04-08
TIANJIN UNIV
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Problems solved by technology
The heat dissipation of the SISL power amplifier in the above article has the following deficiencies: the uniform filling and close connection of solder in different dielectric layers cannot be guaranteed to achieve efficient thermal paths, reduce contact thermal resistance, and effectively dissipate heat
[0006] Therefore, there is currently no technical structure that can effectively dissipate heat from the transistors in the dielectric integrated suspension line power amplifier circuit to ensure the heat dissipation effect of the transistors
Method used
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[0046] In order to make the technical means realized by the present invention easier to understand, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the related application, not to limit the application. In addition, it should be noted that, for ease of description, only parts relevant to the present application are shown in the drawings.
[0047] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.
[0048] It should be noted that in the description of this application, the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The ...
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The invention discloses a heat dissipation structure for a medium-integrated suspension line power amplifier, comprising a first heat-conducting plate (1), a second-layer dielectric plate (2), and a layer of dielectric plate ( 3), the fourth layer of dielectric plate (4) and the second heat-conducting plate (5); the dielectric plate of the layer where the power amplifier installation circuit is located is provided with a transistor (8) through holes; wherein, the fourth layer of dielectric plate is located directly below the transistor , the opening is provided with a heat-conducting metal block; the bottom surface of the heat-conducting metal block is closely connected with the top surface of the second heat-conducting plate; the top surface of the heat-conducting metal block is closely connected with the bottom surface of the transistor; among them, the second layer of dielectric plate The opening is provided with a thermal pad directly above the transistor; the top surface of the thermal pad is closely connected to the bottom surface of the first thermal plate; the bottom surface of the thermal pad is closely connected to the top surface of the transistor. The invention can effectively dissipate heat to the transistors in the power amplifying circuit and ensure the heat dissipation effect of the transistors.
Description
technical field [0001] The invention relates to the technical field of radio frequency microwave circuits, in particular to a heat dissipation structure for a medium-integrated suspension line power amplifier. Background technique [0002] At present, power amplifiers (power amplifying circuits) are key devices in radio frequency microwave circuits, and their heat dissipation issues have been paid more and more attention by the industry. [0003] As the core component in the power amplifier circuit, the transistor has to withstand both high current and high voltage. The power dissipation of the transistor depends on the temperature of the PN junction inside the transistor. When the junction temperature exceeds the allowable value, the drain Or the collector current will increase sharply, which will burn out the tube. The greater the power dissipation of the tube, the higher the junction temperature. [0004] Therefore, by improving the heat dissipation conditions of the tr...
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IPC IPC(8): H01L23/367H01L23/373H01L23/467
CPCH01L23/367H01L23/3736H01L23/467
Inventor 马凯学冯婷陈雄闫宁宁
Owner TIANJIN UNIV