Substrate for radiofrequency applications and associated manufacturing method
A substrate and radio frequency technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as impossible processing, incompatibility with standard semiconductor industry technology, increased substrate stress, substrate bending, etc.
Pending Publication Date: 2020-10-30
SOITEC SA
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Problems solved by technology
However, this option has the disadvantage of increasing the stress on the substrate and the bending of the substrate, which becomes difficult or even impossible to handle in standard microelectronic devices
[0012] Other carrier substrates, such as those made of aluminum nitride or silicon carbide, meet the specifications for RF characteristics, but they are not directly compatible with standard semiconductor industry technologies
Their use as carrier substrates for transferred final device layers is foreseeable; however, the cost of these specific materials combined with the cost of circuit delivery technologies is still too high for mass adoption of these solutions
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[0051] In the description, the same reference numerals may be used for the same type of elements in the drawings. The figures are schematic representations and not drawn to scale for the sake of clarity. In particular, the layer thicknesses along the z-axis are not proportional to their lateral dimensions along the x- and y-axes; and the relative thicknesses of the layers with respect to each other are not necessarily taken into account in the figures.
[0052] The invention relates to a substrate 10 suitable for the manufacture of radio-frequency microelectronic devices, comprising a carrier substrate 1 ( Figure 1a ). Advantageously, the carrier substrate 1 is formed from monocrystalline silicon.
[0053] The substrate 10 of the present invention also comprises a sintered composite layer 2 ( Figure 1a ). A sintered layer refers to a layer resulting from the consolidation of a powder mixture: this consolidation is obtained by inputting thermal and optionally mechanical energ...
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Abstract
The invention relates to a substrate for radiofrequency microelectronic devices comprising a carrier substrate made of a semi-conductor material, characterised in that it comprises a sintered composite layer, disposed on the carrier substrate and formed from powders of at least one first dielectric material and one second dielectric material different from the first material, said sintered composite layer being more than 5 microns thick and having a thermal expansion coefficient matched with that of the carrier substrate, by more or less 30%.
Description
technical field [0001] The invention relates to the field of integrated radio frequency devices. In particular, the invention relates to substrates suitable for such devices and related fabrication methods. Background technique [0002] In most applications involving the transmission or reception of radio frequency signals (10MHz to 100GHz), the substrates required for device fabrication are subject to a growing set of specifications, especially those governed by mobile phone standards (2G, 3G, LTE, The specifications produced by the evolution of LTE Advanced, LTE Advanced PRO, 5G, etc.). The nature of the substrate material must in particular ensure that: [0003] - low insertion loss (low signal attenuation) and good linearity (low signal distortion, cause of harmonics), usually achieved by an effective resistivity higher than 1000 Ohm cm over a wide frequency range; [0004] - the temperature stability of these figures of merit, especially over the operating range of t...
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IPC IPC(8): H01L21/76H01L21/02H01L21/762
CPCH01L21/02002H01L21/76251H01L23/291H01L23/3171H01L23/3733
Inventor 佛雷德里克·阿利伯特克里斯泰勒·维蒂佐D·拉迪森
Owner SOITEC SA