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Turn-Off Thyristor Device with Discrete Gate Drive

A gate drive and thyristor technology, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of affecting radiators, increasing component maintenance costs, and unfavorable flexibility, etc., and achieves low parasitic inductance Effect

Active Publication Date: 2022-07-08
北京清能芯研科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve this purpose, both IGCT and ETO currently adopt the integrated close connection method of the drive circuit board and the tube case that can turn off the thyristor element. If the gate drive fails during use, it will not be possible to directly disassemble or replace the gate drive. Disassemble the turn-off thyristor device as a whole from the press-fit assembly, which greatly increases the maintenance cost of the assembly
In addition, the relative position of the bulky gate drive and the turn-off thyristor case is fixed, which is not conducive to the flexibility of the press-fit assembly design of turn-off thyristor devices, and affects the design of radiators, copper bars, water cooling systems, etc.

Method used

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  • Turn-Off Thyristor Device with Discrete Gate Drive
  • Turn-Off Thyristor Device with Discrete Gate Drive
  • Turn-Off Thyristor Device with Discrete Gate Drive

Examples

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Embodiment Construction

[0075] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0076] As used herein, "comprising," "including," "having," "containing," and the like, are open-ended terms, meaning including but not limited to.

[0077] As used herein, "plurality" includes "two" and "two or more."

[0078] Please refer to figure 2 , figure 2 It is a schematic diagram of the rigid connection structure of th...

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Abstract

The invention discloses a turn-off thyristor device with separate gate drive, comprising: a turn-off thyristor case and an attached interface board, a gate drive board and a connection structure; the turn-off thyristor case and the auxiliary interface board A low-inductance integrated connection is used for connection between them; the gate drive board includes a drive circuit module; the auxiliary interface board and the gate drive board are detachably connected through the connection structure, so as to realize the shutdown of the thyristor shell and the gate Separation or combination between driver boards.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a turn-off thyristor device with separate gate drive. Background technique [0002] As a new type of large-capacity power electronic switching device, the turn-off thyristor has the advantages of reduced on-state voltage and large inrush current, and has important applications in solid-state circuit breakers, converters, power electronic transformers and other fields. IGCT and ETO are two different driving methods commonly used to turn off thyristors, and their electrical topologies are as follows: Figure 1a and Figure 1b As shown in the figure, it includes two parts: the thyristor element that can be turned off and the integrated gate driver. When the trigger is turned on, the driver circuit injects a trigger current of several hundred amperes into the gate (G), which needs to have a higher di / dt. In order to ensure that the chip is evenly turned on; when turne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/10H01L25/16H05K1/18
CPCH01L23/10H01L25/16H05K1/181Y02E40/30
Inventor 曾嵘陈政宇尚杰赵彪余占清刘佳鹏周文鹏
Owner 北京清能芯研科技有限公司
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