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A kind of MEMS inertial device sensitive structure frequency testing device and method

A technology of sensitive structures and inertial devices, applied in measurement devices, instruments, etc., can solve problems such as time lag and waste of resources, and achieve the effect of improving efficiency, shortening production cycles, and avoiding waste of resources

Active Publication Date: 2022-07-08
BEIJING AUTOMATION CONTROL EQUIP INST
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  • Abstract
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  • Claims
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Problems solved by technology

This kind of test method has shortcomings such as time lag and waste of resources, and needs to be improved urgently

Method used

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  • A kind of MEMS inertial device sensitive structure frequency testing device and method

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Embodiment Construction

[0018] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0019] figure 1 It is the design principle diagram of the frequency testing device of the sensitive structure of the present invention. The testing device includes an electric XY axis moving stage 4 and a piezoelectric ceramic frequency sweeping device. Metal pressing piece 5, positioning nut 6. The piezoelectric ceramic 3 is rigidly connected with the wafer-bearing table 2 , and the piezoelectric ceramic 3 is bonded under the wafer-bearing table 2 by using paraffin wax. The wafer substrate 1 is pressed and fixed on the wafer support table 2 by a rigid metal pressing piece 5 . The wafer stage 2 is fixed on the electric XY-axis moving stage 4 through the positioning nut 6 .

[0020] The selection of the electric XY axis moving stage 4 mainly considers that the moving range matches the size of the wafer substrate 1 .

[0021] The selection of the piezoe...

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Abstract

The invention discloses a MEMS inertial device sensitive structure frequency testing device and method, comprising an electric XY-axis moving stage (4), a wafer-bearing stage (2), and piezoelectric ceramics (3), wherein the piezoelectric ceramics (3) are rigid It is connected under the film holding table (2), and the film holding table (2) is fixed on the electric XY axis moving table (4). The piezoelectric ceramic (3) is driven to vibrate through the signal generator and the power amplifier device, and the Doppler measuring instrument is aligned with the position of the driving end of one of the sensitive structures according to the sequence on the sensitive structure of the wafer substrate, and the driving end of the frequency sweep period is obtained. The maximum vibration amplitude point, the corresponding frequency is the driving resonance frequency of the sensitive structure. The invention has high efficiency and low cost.

Description

technical field [0001] The invention belongs to the technical field of MEMS inertial device sensitive structures, in particular to a method for testing parameters such as driving frequency and detection frequency of a MEMS inertial device sensitive structure. Background technique [0002] Parameters such as driving frequency and detection frequency of the sensitive structure of MEMS inertial devices are of great significance for evaluating the performance of the device. In order to accurately measure and obtain these parameter values, traditional testing methods generally require the sensitive structures to be packaged and connected to functional circuits before they can be tested. [0003] After the test, the products will be screened according to the parameter measurement results, and the unqualified products with out-of-tolerance frequencies will be eliminated. Such testing methods have shortcomings such as time lag and waste of resources, which are in urgent need of imp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01C25/00
CPCG01C25/00
Inventor 车一卓苏翼王汝弢王永胜盛洁
Owner BEIJING AUTOMATION CONTROL EQUIP INST
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