Manufacturing method of three-dimensional memory

A manufacturing method and memory technology, applied in the direction of electrical components, etc., can solve the problems of not being able to provide bit density, competition, etc.

Active Publication Date: 2020-12-01
YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the two-layer stacked memory cell architecture cannot provide sufficient bit den

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of three-dimensional memory
  • Manufacturing method of three-dimensional memory
  • Manufacturing method of three-dimensional memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0085] In order to make the technical solutions and advantages of the embodiments of the present invention more clear, the specific technical solutions of the invention will be further described in detail below in conjunction with the drawings in the embodiments of the present invention.

[0086] figure 1 It is a schematic diagram of a three-dimensional phase-change memory cell array observed by a scanning electron microscope. From figure 1 It can be seen that the three-dimensional phase change memory chip is composed of a plurality of small memory cell array blocks with a single bit line, word line and memory cells. A three-dimensional phase-change memory generally includes a top bit line, a word line, a bottom bit line, and a memory cell located at the intersection of the bit line and the word line. In practical applications, the word line, top bit line and bottom bit line are usually formed by a 20nm / 20nm line width (L / S, line / space) formed after the patterning process. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The embodiment of the invention provides a manufacturing method of a three-dimensional memory. The manufacturing method comprises the following steps forming a three-dimensional memory with four layers of stacked memory unit modules, wherein the manufacturing method of each layer of memory unit module comprises the following steps forming a first address line material layer, forming a plurality ofmemory units on the first address line material layer, and forming a second address line material layer above the plurality of memory units, wherein the projection of the address line of the first address line material layer on a first plane is perpendicular to the projection of the address line of the second address line material layer on the first plane, the projections of the address lines ofthe first address line material layers in different memory unit modules on the first plane are partially overlapped, and the projections of the address lines of the second address line material layersin different memory unit modules on the first plane are partially overlapped.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a three-dimensional memory. Background technique [0002] Phase Change Memory (PCM, Phase Change Memory) is a storage technology that uses chalcogenides as a storage medium, and uses the resistance difference of materials in different states to store data. PCM has the advantages of bit-addressable, no data loss after power failure, high storage density, and fast read and write speed, and is considered to be the most promising next-generation memory. [0003] In the related art, the architecture of the mainstream three-dimensional phase change memory includes two layers of stacked memory cells. However, the two-layer stacked memory cell architecture cannot provide sufficient bit density to compete with mainstream DRAM (Dynamic Random Access Memory) and NAND memory. In order to improve the competitiveness of 3D phase change memory, it is necessar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/231H10N70/841H10N70/826H10N70/011
Inventor 刘峻
Owner YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap