Ultrahigh-precision silicon quadrant photoelectric detector

A photodetector, quadrant technology, applied in the field of optoelectronic information, can solve the problem of increasing the optical dynamic range and so on

Active Publication Date: 2020-12-08
CHONGQING EAGLE VALLEY OPTOELECTRONICS
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

However, the optical dynamic range i

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  • Ultrahigh-precision silicon quadrant photoelectric detector
  • Ultrahigh-precision silicon quadrant photoelectric detector
  • Ultrahigh-precision silicon quadrant photoelectric detector

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Embodiment Construction

[0016] In order to facilitate the understanding of those skilled in the art, the present invention will be further described below in conjunction with the embodiments and accompanying drawings, and the contents mentioned in the embodiments are not intended to limit the present invention.

[0017] The silicon quadrant photodetector provided by the present invention generally has two types, one is a general single four-quadrant photodetector, and the other is a "double four" quadrant photodetector with higher precision.

[0018] In the "double four" quadrant photodetector chip, a ring pole with the function of "electronic potential barrier" is designed between each quadrant photosensitive element (the width of the ring pole is 30um, and the "outer four" photosensitive elements are surrounded by The width of the ring pole is 100-150um), which is made of the same type of impurities on the chip substrate, and is diffused or implanted simultaneously with the back electrode of the sub...

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Abstract

The invention discloses an ultrahigh-precision silicon quadrant photoelectric detector, which is characterized in that a ring pole is arranged between quadrant photosensitive elements and on the surface of a substrate around the quadrant photosensitive elements, and the ring pole is a high-low junction formed by simultaneously diffusing or injecting impurities of the same type as the substrate anda back electrode of the substrate; the ring electrode is directly connected with a common electrode of each quadrant photosensitive element on the back surface of the substrate through a lead; a ringpole is not arranged between an inner four-quadrant photosensitive element and an outer four-quadrant photosensitive element of the double-four-quadrant photoelectric detector, and a notch with the width being 1/2-1/4 of the arc length of the outer edge of the photosensitive element is formed in the center of the ring pole corresponding to the outer edge of the photosensitive element of a singlefour-quadrant photoelectric detector. When the photosensitive element with the annular pole notch is strong in illumination, part of photon-generated carriers generated by the photosensitive element can enter isolation diodes around the outer four-quadrant photosensitive element and the single four-quadrant photosensitive element of the double-four-quadrant photosensitive element through the electronic channels respectively, so that the saturated light power of the photoelectric detector is improved, and the purpose of deep control of a guidance system is achieved.

Description

technical field [0001] The invention belongs to the field of optoelectronic information technology, and specifically relates to an ultra-high-precision silicon quadrant photodetector with no photoelectric crosstalk, no electrical interference, extended optical dynamic range, and "fine control" and "deep control" capabilities. Background technique [0002] The four-quadrant photodetector is a photodetector device that arranges four photodiodes with exactly the same performance according to the requirements of rectangular coordinates, and is often used in laser guidance. The accuracy of the quadrant photodetector used for laser guidance mainly depends on whether there is photoelectric crosstalk between the quadrants of the photodetector chip, the size of the blind area of ​​the detector, and the width of the optical dynamic range. Usually, the photoelectric crosstalk between the quadrants of silicon quadrant photodetectors is above 5%. When the receiving system gradually appro...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/103
CPCH01L31/035272H01L31/103Y02P70/50
Inventor 卜京王亚赫卜晖朱华海
Owner CHONGQING EAGLE VALLEY OPTOELECTRONICS
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