GOA circuit

Abstract

The invention provides a GOA circuit which comprises a plurality of cascaded GOA units, namely a pull-up control module, a cascade module, a pull-down maintenance module, a pull-down control module and a signal output module, the structure of an inverter module in the pull-down maintenance module is improved, and the GOA circuit has the beneficial effects that on the basis of maintaining the function of the traditional technical scheme, the inverter module in the pull-down maintaining module is optimized, the volt-ampere characteristic difference of each transistor after the inverter module works for a long time can be effectively reduced, and then the working time of the inverter module is prolonged.

Description

technical field [0001] The invention relates to the display field, in particular to a GOA circuit. Background technique [0002] GOA (Gate Driver on Array, gate row scanning drive) technology is beneficial to realize the design of narrow borders on the gate driver (gate drive) side of the display screen and reduce costs. [0003] refer to figure 1 and figure 2 , in the existing GOA circuit, the inverter module generally includes four transistors, and the transistor T 51 , Transistor T 52 , Transistor T 53 and transistor T 54 , the bias stress states of the three-terminal voltages of these four transistors are different (the gate and drain of the transistor T51 are electrically connected to the Nth-level clock signal at the same time, and the transistor T51 51 The drain potential of the transistor is slightly lower than the threshold voltage of the gate and the source, which belongs to a weak forward bias stress state; the transistor T 53 The gate potential of the tra...

AI Technical Summary

Problems solved by technology

[0005] The invention relates to a GOA circuit, which is used to solve the problem that in the prior art, the bias state of the transistors in the inverter module of the GOA circuit is different, resulting in a large difference in the volt-ampere characteristics between different transistors, and long-term work will affect the inversion The problem of the working performance of the module

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